Aberration Measurement Method for Hyper-NA Lithographic Projection Lens

Zhu Boer; Wang Xiangzhao; Li Sikun; Yan Guanyong; Shen Lina; Duan Lifeng

doi:10.3788/aos201636.0112002

[1] T A Brunner. Impact of lens aberrations on optical lithography[J]. IBM J Res Develop, 1997, 41(1.2): 57-67.

[2] A Erdmann, M Arnz. The impact of aberration averaging during step-and-scan on the photolithographic process[J]. Microelectron Eng, 1998, 41(42): 117-120.

[3] P Graeupner, R B Garreis, A Goehnermeier, et al.. Impact of wavefront errors on low k1 processes at extremely high NA[C]. SPIE, 2003, 5040: 119-130.

[4] H Van der Laan, M Dierichs, H van Greevenbroek, et al.. Aerial image measurement methods for fast aberration set-up and illumination pupil verification[C]. SPIE, 2001, 4346: 394-407.

[5] K van Ingen Schenau, H Bakker, M Zellenrath, et al.. System qualification and optimization for imaging performance on the 0.80-NA 248-nm step-and-scan systems[C]. SPIE,2002,4691:637-651.

[6] Z Qiu, X Wang, Q Yuan, et al.. Coma measurement by use of an alternating phase-shifting mask mark with a specific phase width[J]. Appl Opt, 2009, 48(2): 261-269.

[7] T Hagiwara, N Kondo, I Hiroshi, et al.. Development of aerial image based aberration measurement technique[C]. SPIE, 2005, 5754: 1659- 1669.

[8] W Liu, S Liu, T Zhou, et al.. Aerial image based technique for measurement of lens aberration up to 37th Zernike coefficient in lithographic tools under partial coherent illumination[J]. Opt Express, 2009, 17(21): 19278-19291.

[9] Q Yuan, X Wang, Z Qiu, et al.. Even aberration measurement of lithography projection system based on optimized phase-shifting marks [J]. Microelectron Eng, 2009, 86(1): 78-82.

[10] Tu Yuanying, Wang Xiangzhao, Yan Guanyong. Odd aberration measurement technique based on peak intensity difference of aerial image [J]. Acta Optica Sinica, 2013, 33(5): 0512002.

[11] B Peng, X Wang, Z Qiu, et al.. Aberration-induced intensity imbalance of alternating phase-shifting mask in lithographic imaging[J]. Opt Lett, 2010, 35(9): 1404-1406.

[12] L Duan, X Wang, A Bourov, et al.. In situ aberration measurement technique based on principal component analysis of aerial image[J]. Opt Express, 2011, 19(19): 18080-18090.

[13] D Xu, X Wang, Y Bu, et al.. In situ aberration measurement technique based on multi-illumination settings and principal component analysis of aerial images[J]. Chin Opt Lett, 2012, 10(12): 121202.

[14] Yang Jishuo, Wang Xiangzhao, Li Sikun, et al.. In situ aberration measurement method based on a phase-shift rings target[J]. Acta Optica Sinica, 2014, 34(2): 0211004.

[15] Yang Jishuo. Study on Aberration Measurement Based on Aerial Image for Lithographic Projection Lens[D]. Shanghai: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 2013: 28-38.

[16] A K Wong. Optical Imaging in Projection Microlithography[M]. Bellingham: SPIE Press, 2005: 102-107.

[17] M Born, E Wolf. Principles of Optics[M]. New York:Springer, 1998: 411-417.

[18] N Yamamoto, J Kye, H J Levinson. Polarization aberration analysis using Pauli-Zernike representation[C]. SPIE, 2007, 6520: 65200Y.

[19] L Shen, S Li, X Wang, et al.. Analytical analysis for impact of polarization aberration of projection lens on lithographic imaging quality [C]. SPIE, 2015, 9426: 94261E.

[20] I T Jolliffe. Principal Component Analysis[M]. New York: Springer Press, 2002: 150-165.

[21] Chris A Mack. Lithography simulation in semiconductor manufacturing[C]. SPIE, 2004, 5645: 63-83.

[22] J O Rawlings, S G Pantula, D A Dickey. Applied Regression Analysis: a Research Tool[M]. New York:Springer-Verlag Press, 2008: 93- 97.

[23] K Lai, G M Gallatin, M A van de Kerkhof, et al.. New paradigm in Lens metrology for lithographic scanner: evaluation and exploration [C]. SPIE, 2004, 5377: 160-171.

CLP Journals