[1] Savin H. Repo P, von Gastrow G, et al. Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency[J]. Nature Nanotechnology, 10, 624-628(2015).
[3] Sadrozinski H F W. Applications of silicon detectors[J]. IEEE Transactions on Nuclear Science, 48, 933-940(2001).
[4] Roumanie M, Delattre C, Mittler F et al. Enhancing surface activity in silicon microreactors: use of black silicon and alumina as catalyst supports for chemical and biological applications[J]. Chemical Engineering Journal, 135, S317-S326(2008).
[5] Striemer C C, Fauchet P M. Dynamic etching of silicon for broadband antireflection applications[J]. Applied Physics Letters, 81, 2980-2982(2002).
[6] Yoo J. Reactive ion etching (RIE) technique for application in crystalline silicon solar cells[J]. Solar Energy, 84, 730-734(2010).
[7] Yuan H, Yost V E, Page M et al. Efficient black silicon solar cell with a density-graded nanoporous surface: optical properties, performance limitations, and design rules[J]. Applied Physics Letters, 95, 123501(2009).
[8] Steglich M, Oehme M, Käsebier T et al. Ge-on-Si photodiode with black silicon boosted responsivity[J]. Applied Physics Letters, 107, 051103(2015).
[9] Hu S X, Han P D, Wang S et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing[J]. Semiconductor Science and Technology, 27, 102002(2012).
[10] Umezu I, Warrender J M, Charnvanichborikarn S et al. Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens[J]. Journal of Applied Physics, 113, 213501(2013).
[11] Mailoa J P, Akey A J, Simmons C B et al. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon[J]. Nature Communications, 5, 3011(2014).
[12] Her T H, Finlay R J, Wu C et al. Microstructuring of silicon with femtosecond laser pulses[J]. Applied Physics Letters, 73, 1673-1675(1998).
[13] Wu C, Crouch C H, Zhao L et al. Near-unity below-band-gap absorption by microstructured silicon[J]. Applied Physics Letters, 78, 1850-1852(2001).
[14] Carey J E, Crouch C H, Shen M Y et al. Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes[J]. Optics Letters, 30, 1773-1775(2005).
[15] Huang Z H, Carey J E, Liu M G et al. Microstructured silicon photodetector[J]. Applied Physics Letters, 89, 033506(2006).
[18] Li C H, Wang X P, Zhao J H et al. Black silicon IR photodiode supersaturated with nitrogen by femtosecond laser irradiation[J]. IEEE Sensors Journal, 18, 3595-3601(2018).
[19] Carey P G, Sigmon T W. In-situ doping of silicon using the gas immersion laser doping (GILD) process[J]. Applied Surface Science, 43, 325-332(1989).
[20] Winkler M T, Sher M J, Lin Y T et al. Studying femtosecond-laser hyperdoping by controlling surface morphology[J]. Journal of Applied Physics, 111, 093511(2012).
[21] Crouch C H, Carey J E, Shen M et al. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Applied Physics A, 79, 1635-1641(2004).
[22] Bucksbaum P H, Bokor J. Rapid melting and regrowth velocities in silicon heated by ultraviolet picosecond laser pulses[J]. Physical Review Letters, 53, 182-185(1984).
[23] Reitano R, Smith P M, Aziz M J. Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism[J]. Journal of Applied Physics, 76, 1518-1529(1994).
[24] Sher M, Mangan N M, Smith M J et al. Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: dopant incorporation mechanism[J]. Journal of Applied Physics, 117, 125301(2015).
[25] Mangan N M. Organization and diffusion in biological and material fabrication problems[D]. Cambridge:Harvard University(2013).
[26] Lin Y T, Mangan N M, Marbach S et al. Creating femtosecond-laser-hyperdoped silicon with a homogeneous doping profile[J]. Applied Physics Letters, 106, 062105(2015).
[27] Mott N F, Twose W D. The theory of impurity conduction[J]. Advances in Physics, 10, 107-163(1961).
[28] Mo Y N, Bazant M Z, Kaxiras E. Sulfur point defects in crystalline and amorphous silicon[J]. Physical Review B, 70, 205210(2004).
[29] Shao H Z, Li Y, Zhang J H et al. Physical mechanisms for the unique optical properties of chalcogen-hyperdoped silicon[J]. EPL (Europhysics Letters), 99, 46005(2012).
[30] Sánchez K, Aguilera I, Palacios P et al. Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)[J]. Physical Review B, 82, 165201(2010).
[31] Sher M, Mazur E. Intermediate band conduction in femtosecond-laser hyperdoped silicon[J]. Applied Physics Letters, 105, 032103(2014).
[32] Gimpel T, Hoger I, Falk F et al. Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon[J]. Applied Physics Letters, 101, 111911(2012).
[33] Tull B R, Winkler M T, Mazur E. The role of diffusion in broadband infrared absorption in chalcogen-doped silicon[J]. Applied Physics A, 96, 327-334(2009).
[34] Dong X, Li N, Zhu Z et al. A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation[J]. Applied Physics Letters, 104, 091907(2014).
[35] Dong X. Properties and applications of the femtosecond laser formed nitrogen-hyperdoped silicon material[D]. Shanghai: Fudan University, 45-65(2014).
[36] Du L Y, Wu Z M, Li R et al. Near-infrared photoresponse of femtosecond-laser processed Se-doped silicon n +-n photodiodes[J]. Optics Letters, 41, 5031-5034(2016).
[37] Li C H, Zhao J H, Chen Q D et al. Sub-bandgap photo-response of non-doped black-silicon fabricated by nanosecond laser irradiation[J]. Optics Letters, 43, 1710-1713(2018).
[38] Qiu X D, Yu X G, Yuan S et al. Trap assisted bulk silicon photodetector with high photoconductive gain, low noise, and fast response by Ag hyperdoping[J]. Advanced Optical Materials, 6, 1700638(2018).
[39] Huang S, Wu Q, Jia Z X et al. Black silicon photodetector with excellent comprehensive properties by rapid thermal annealing and hydrogenated surface passivation[J]. Advanced Optical Materials, 8, 1901808(2020).
[40] Crouch C H, Carey J E, Warrender J M et al. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon[J]. Applied Physics Letters, 84, 1850-1852(2004).
[41] Smith M J, Lin Y T, Sher M et al. Pressure-induced phase transformations during femtosecond-laser doping of silicon[J]. Journal of Applied Physics, 110, 053524(2011).
[42] Casalino M, Coppola G, Iodice M et al. Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives[J]. Sensors, 10, 10571-10600(2010).
[43] Queisser H J, Haller E. Defects in semiconductors: some fatal, some vital[J]. Science, 281, 945-950(1998).
[44] Wang X, Zheng H, Tan C et al. Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film[J]. Optics Express, 18, 19379-19385(2010).
[45] Smith M J, Sher M, Franta B et al. The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation[J]. Journal of Applied Physics, 112, 083518(2012).
[46] Newman B, Sher M, Mazur E et al. Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon[J]. Applied Physics Letters, 98, 251905(2011).
[47] Kim T, Warrender J M, Aziz M J. Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur[J]. Applied Physics Letters, 88, 241902(2006).
[48] Franta B, Pastor D, Gandhi H H et al. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing[J]. Journal of Applied Physics, 118, 225303(2015).
[49] Dong X, Li N, Liang C et al. Strong mid-infrared absorption and high crystallinity of microstructured silicon formed by femtosecond laser irradiation in NF3 atmosphere[J]. Applied Physics Express, 6, 081301(2013).
[50] Alpass C R, Murphy J D, Falster R J et al. Nitrogen diffusion and interaction with dislocations in single-crystal silicon[J]. Journal of Applied Physics, 105, 013519(2009).
[51] Zhang H X, Stavola M, Seacrist M. Nitrogen-containing point defects in multi-crystalline Si solar-cell materials[J]. Journal of Applied Physics, 114, 093707(2013).
[52] Sun H B, Liang C, Feng G J et al. Improving crystallinity of femtosecond-laser hyperdoped silicon via co-doping with nitrogen[J]. Optical Materials Express, 6, 1321-1328(2016).
[53] Sun H B, Xiao J M, Zhu S W et al. Crystallinity and sub-band gap absorption of femtosecond-laser hyperdoped silicon formed in different N-containing gas mixtures[J]. Materials, 10, 351(2017).
[54] Ma S X, Liu X L, Sun H B et al. Enhanced responsivity of co-hyperdoped silicon photodetectors fabricated by femtosecond laser irradiation in a mixed SF6/NF3 atmosphere[J]. Journal of The Optical Society of America B-Optical Physics, 37, 730-735(2020).
[55] Jia Z X, Wu Q, Jin X R et al. Highly responsive tellurium-hyperdoped black silicon photodiode with single-crystalline and uniform surface microstructure[J]. Optics Express, 28, 5239-5247(2020).
[56] Sundaram S K, Mazur E. Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses[J]. Nature Materials, 1, 217-224(2002).
[57] Wang M, Berencén Y, García-Hemme E et al. Extended infrared photoresponse in Te-Hyperdoped Si at room temperature[J]. Physical Review Applied, 10, 024054(2018).
[58] Du L Y, Yin J, Wen Y Q et al. Possible excited states in Si∶Se and Si∶Te prepared by femtosecond-laser irradiation of Si coated with Se or Te film[J]. Infrared Physics & Technology, 104, 103150(2020).
[60] Sun B Q, Shao M W, Lee S. Nanostructured silicon used for flexible and mobile electricity generation[J]. Advanced Materials, 28, 10539-10547(2016).
[61] Xie C, Yan F. Flexible photodetectors based on novel functional materials[J]. Small, 13, 1701822(2017).
[63] Mulazimoglu E, Coskun S, Gunoven M et al. Silicon nanowire network metal-semiconductor-metal photodetectors[J]. Applied Physics Letters, 103, 083114(2013).
[64] Hossain M, Kumar G S. Barimar Prabhava S N, et al. Transparent, flexible silicon nanostructured wire networks with seamless junctions for high-performance photodetector applications[J]. ACS Nano, 12, 4727-4735(2018).
[65] Dai Y J, Wang X F, Peng W B et al. Self-powered Si/CdS flexible photodetector with broadband response from 325 to 1550 nm based on pyro-phototronic effect: an approach for photosensing below bandgap energy[J]. Advanced Materials, 30, 1705893(2018).
[66] Yao G, Pan T S, Yan Z C et al. Tailoring the energy band in flexible photodetector based on transferred ITO/Si heterojunction via interface engineering[J]. Nanoscale, 10, 3893-3903(2018).
[67] Mei H, Wang C, Yao J et al. Development of novel flexible black silicon[J]. Optics Communications, 284, 1072-1075(2011).
[68] Jin X R, Sun Y Q, Wu Q et al. High-performance free-standing flexible photodetectors based on sulfur-hyperdoped ultrathin silicon[J]. ACS Applied Materials & Interfaces, 11, 42385-42391(2019).
[69] Wale M J. Self aligned, flip chip assembly of photonic devices with electrical and optical connections. [C]∥40th Conference Proceedings on Electronic Components and Technology, May 20-23, 1990, Las Vegas, NV, USA, USA, 3897338(1990).
[70] Leclerc D, Brosson P, Pommereau F et al. High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique[J]. IEEE Photonics Technology Letters, 7, 476-478(1995).