• Journal of Infrared and Millimeter Waves
  • Vol. 30, Issue 3, 246 (2011)
BAO XiChang1、2、*, ZHANG WenJing1、2, LIU ShiJia1、3, LI Chao1、2, and LI XiangYang1、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    BAO XiChang, ZHANG WenJing, LIU ShiJia, LI Chao, LI XiangYang. Fabrication and properties of planar GaN pn detector[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 246 Copy Citation Text show less
    References

    [1] Malachowski M J. Impact of energy bandgap grading on responsivity of an AlxGa1-xN ultraviolets pn detector [J]. SolidState Electronics,1998,42(6):963—967.

    [2] Parish G, Keller S , Kozodoy P, et al. Highperformance (AlGa)Nbased solarblind ultraviolet pin detectors on laterally epitaxially overgrown GaN[J]. Appl. Phys. Lett.,1999,75(2):247—249.

    [3] Zhou Y, Ahyi C, Tin C C, et al. Fabrication and device characteristics of Schottkytype bulk GaNbased “visibleblind” ultraviolet photodetectors[J]. Appl. Phys. Lett.,2007,90:121118.

    [4] Young S J, Ji L W, Chang S J, et al. ZnObased MIS photodetectors[J]. Sensors and Actuators A,2007,135(2):529—533.

    [5] Chen X P, Zhu H L, Cai J F, et al. High performance 4HSiCbased ultraviolet pin photodetector[J]. J. Appl. Phys.,2007,102:024505.

    [6] Eiting C J, Grudowski P A, Dupuis R D, et al. Activation studies of lowdose Si implants in gallium nitride[J]. Appl. Phys. Lett.,73(26):3875—3877.

    [7] James A, Fellows Y K, Yeo M Y, et al. Electrical and Optical Activation Studies of SiImplanted GaN[J]. J. Electron. Mater.,1999,34(8):1157—1164.

    [8] Sheu J K, Tun C J, Tsai M S, et al. n+GaN formed by Si implantation into pGaN[J]. J. Appl. Phys.,2002,91(4):1845—1848.

    [9] Irokawa Y, Fujishima O, Kachi T, et al. Electrical activation characteristics of siliconimplanted GaN[J]. J. Appl. Phys.,2005,97:083505.

    BAO XiChang, ZHANG WenJing, LIU ShiJia, LI Chao, LI XiangYang. Fabrication and properties of planar GaN pn detector[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 246
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