[1] F. Khan, S. N. Singh, M. Husain.Effect of illumination intensity on cell parameters of a silicon solar cell[J]. Solar Energy Materials and Solar Cells, 2010, 94(9): 1473~1476
[2] T. C. Cheng, C. H. Cheng, Z. Z. Huang et al.. Development of an energy-saving module via combination of solar cells and thermoelectric coolers for green building applications[J]. Energy, 2011, 36(1): 133~140
[3] R. Cariou, M. Labrune, P. R. Cabarrocas. Thin crystalline silicon solar cells based on epitaxial films grown at 165 ℃ by RF-PECVD[J]. Solar Energy Materials and Solar Cells, 2011, 95(8): 2260~2263
[4] Wang Xuemeng, Zhao Ruqiang, Shen Hui et al.. Laser surface texturation of multicrystalline silicon for solar cell[J]. Laser & Optoelectronics Progress, 2010, 47(1): 011401
[5] L. Zhao, C. L. Zhou, H. L. Li et al.. Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation[J]. Solar Energy Materials and Solar Cells, 2008, 92(6): 673~681
[6] T. Mishima, M. Taguchi, H. Sakata et al.. Development status of high-efficiency HIT solar cells[J]. Solar Energy Materials and Solar Cells, 2011, 95(1): 18~21
[7] Xiong Shaozhen, Zhu Meifang. Solar Energy Foundation and Application[M]. Beijing: Science Press, 2009. 164~172
[8] Wu Dingyun, Peng Yufeng, Zhao Jichang et al.. Analyses of structure parameters of amorphous silicon film photovoltaic cells[J]. Laser & Optoelectronics Progress, 2011, 48(9): 093102
[9] R. Biswas, A. S. Kuar, S. Sarkar et al.. A parametric study of pulsed Nd:YAG laser micro-drilling of gamma-titanium aluminide[J]. Opt. Laser Technol., 2010, 42(1): 23~31
[10] J. Y. Ding, L. Q. Zhang, Z. F. Zhang et al.. Frequency splitting phenomenon of dual transverse modes in a Nd:YAG laser[J]. Opt. Laser Technol., 2010, 42(2): 341~346
[11] Yin Xianhua, Zhang Guowen, Zhou Shenlei et al.. Criteria study of laser induced damage[J]. Laser & Optoelectronics Progress, 2012, 49(1): 011404
[14] N. C. C. Lu, S. Member, L. Gerzberg et al.. Modeling and optimization of monolithic polycrystalline silicon resistors[J]. IEEE Trans. Electron Devices, 1981, 28(7): 818~830
[15] Ma Tieying, Li Tie, Liu Wenping et al.. Influence of annealing on TCR of phosphor-doped amorphous silicon by PECVD[J]. J. Synthetic Crystals, 2007, 36(2): 448~452