PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Sou I K, Wong K S, Yang Z Y, et al. Highly efficient light emission from ZnS1-xTex alloys. Appl.Phys.Lett., 1995, 66:1915

[2] Heimbrodt W, Goede O. Energy transfer processes between Ten centres in ZnS∶Te and CdS∶Te. Phys.Stat.Sol.(b), 1986, 135:795

[3] Liu N Z, Li G H, Zhang W, et al. Pressure behavior of deep centers in ZnSxTe1-x alloys. Phys.Stat.Sol.(b), 1999,211:163

[4] Reznitsky A, Permogorov S, Verbin S, et al. Localization of excitons and Anderson transition in ZnSe1-xTex solid solutions. Solid State Commun.,1984, 52:13

[5] Lee D, Mysyrowicz A, Vnurmikko A, et al. Exciton self-trapping in ZnSe-ZnTe alloys. Phys.Rev.Lett., 1987,58:1475

[6] Yao T, Kato M, Davies J J, et al. Photoluminescence of excitons bound at Te isoelectronic traps in ZnSe. J.Cryst.Growth, 1988,86:552

[7] Lee C D, Park H L, Chung C H, et al. Free-exciton luminescence from ZnSe1-xTex. Phys.Rev.,1992,B45:4491

[8] Chang S K, Lee C D, Park H L, et al. Exciton transfer processes in ZnSe1-xTex. J.Cryst.Growth, 1992, 117:793

[9] Takojima N, IshizukaY, Tsubono I, et al. Green emission enhanced by Te isoelectronic traps in ZnSe grown by molecular beam epitaxy. J.Cryst.Growth, 1995,150:770

[10] Ge W K, Lam S B, Sou I K, et al. Sulfur forming an isoelectronic center in zinc telluride thin films. Phys.Rev.,1997,B55:10035

[11] Rockwell B, Chandrasekhar H R, Chandrasekhar M, et al. Pressure tuning of stains in semiconductor heterostructures:(ZnSe epilayer)/(GaAs epilayer). Phys.Rev.,1991,B44:11307

[12] Edwards A L, Drickamer H G. Effect of pressure on the absorption edges of some Ⅲ-Ⅴ,Ⅱ-Ⅶ, and Ⅰ-Ⅶ compounds. Phys.Rev.,1961,122:1149

[13] Li G H, Zheng B Z, Han H X, et al. Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure. Phys.Rev.,1992,B45:3489

[15] Brasil M J S P, Nahaory R E, Turco-Sandroff F S, et al. Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1-xTex alloys growth by molecular beam epitaxy. Appl.Phys.Lett.,1991,58:2509

[16] Dhese K, Goodwin J, Hagston W E, et al. Interpretation of the temperature-dependent behavior of the emission from isoelectronic tellurium centers in epitaxial ZnSe1-xTex. Semicond. Sci. Technol.,1992,7:1210