PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 21 >Issue 1 >Page 28 > Article

Journal of Infrared and Millimeter Waves
Vol. 21, Issue 1, 28 (2002)

PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE

[in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOLUMINESCENCE OF Te ISOELECTRONIC TRAPS IN ZnSeTe/ZnSe QUANTUM WELLS UNDER HYDROSTATIC PRESSURE[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 28 Copy Citation Text

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Abstract

The photoluminescence (PL) of ZnSe 0.92Te 0.08?ZnSe superlattice quantum wells at 77K under hydrostatic pressure up to 7.8 GPa was studied. Strong PL peaks from excitons trapped in isoelectronic traps in ZnSe 0.92Te 0.08 were observed. It was found that the pressure coefficients of the PL peaks from Te traps are about half of that of ZnSe. It demonstrates the localized characteristic of the potential of Te isoelectronic traps. The excitons transition between Te traps in ZnSe 1-xTe x and (CdSe) 1?(ZnSe) 3 superlattice was also investigated.

Keywords

photoluminescence.pressure Te isoelectronic traps

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