• Journal of Infrared and Millimeter Waves
  • Vol. 22, Issue 6, 401 (2003)
[in Chinese], [in Chinese], G, and [in Chinese]
Author Affiliations
  • Laboratory for Physical Electronics and Photonics,Department of Physics and Engineering Physics,Chalmers University of Technology,S-412 96 Goteborg,Sweden
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    DOI: Cite this Article
    [in Chinese], [in Chinese], G, [in Chinese]. OPTICAL SPECTRA OF LOW-DIMENSIONAL SEMICONDUCTORS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(6): 401 Copy Citation Text show less
    References

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    [2] Kim S, Razeghi M. Chapter 3 Recent advances in quantum dot optoelectronic devices and future trends, Nalwa H S, In Handbook of Advanced Electronic and Photonic Materials and Devices. San Diego: Academic Press San Diego 2000, 2: 133-154

    [3] Gunapala S D, Liu J K, Park J S. Et al.9-μm cutoff 256·256 GaAs/AlxGa1-xAs quantum well infrared photodetector hand-held camera. IEEE. Trans. Electron Dvices, 1997, 44: 51-57

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    [14] Asada M. Chapter 2 Intraband relaxation effect on optical spectra, In P.S.Zory Quantum Well Lasers. Jr., San Diego: Academic Press San Diego, 1993

    [in Chinese], [in Chinese], G, [in Chinese]. OPTICAL SPECTRA OF LOW-DIMENSIONAL SEMICONDUCTORS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(6): 401
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