• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 1, 53 (2001)
[in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、3, and [in Chinese]1、3
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOLUMINESCENCE STUDIES OF TYPE-Ⅱ SELF-ASSEMBLED InAl As/AlGaAs QDs GROWN ON (311)A GaAs SUBSTRATE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 53 Copy Citation Text show less
    References

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    [2] Bennett B R, Magno R, Shanabrook B V. Photoluminescence studies of self-assembled InSb, GaSb, and A1Sb quantum dot heterostructures,Appl.Phys.Lett.,1996,68: 505

    [3] Fafard S, Leon R, Leon D,et al. Visible photoluminescence from N-dot ensembles and linewidth of ultrasmall AlInAs/AlGaAs quantum dot, Phys. Rev.B,1994,50: 8086

    [4] Phillips J, Bhattacharya P, Venkateswaran. Pressure-induced energy level crossings and narrouing of photoluminescence linewidth in self-assembled InAsAs/AlGaAs quantum dots, Appl. Phys. Lett.,1999,74: 1549

    [5] Fafard S, Leon R, Leonard D,et al. Phonons and radiative recombination in self-assembled quantum dots,Phys. Rev.B,1995,52 : 5752

    [6] Fu L P, Bacalzo F T, Gilliland G D, et al. Photoluminescence determination of thermally activated fast X-Γ interlayer electron scattering in t ype-Ⅱ GaAs/AlAs superlattice, Phys. Rev.B,1995,51: 17630

    [7] Venkateswaran U, Chandrasekhar M, Chandrasekhar H R, et al. High-pressure studies of GaAs-AlGaAs quantum wells of widths 26 to 150 , Phys. Rev. B,1986,33: 8416

    [8] Li G H, Goni A R, Abraham C, et al. Photoluminescence from stra ined InAs monolayers in GaAs under pressure, Phys.Rev.B,1994,50 : 1575

    [9] Ikonic Z.Srivastava G P. Electronic structure of [133]-grown (Ga As)m (AlAs)n superlattices,Phys.Rev.B,1994,49(15):10749

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHOTOLUMINESCENCE STUDIES OF TYPE-Ⅱ SELF-ASSEMBLED InAl As/AlGaAs QDs GROWN ON (311)A GaAs SUBSTRATE[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 53
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