Fig. 1. (a) Typical zero-bias detector circuit structure,(b) improved zero-bias detector structure
Fig. 2. (a) Structure of the QVSD and its 3D electromagnetic model in HFSS, (b) equivalent circuits of the QVSD and diode junction area
Fig. 3. (a) Short-circuit structure of the QVSD and its port loading model in HFSS (b) equivalent circuit
Fig. 4. Simulated and measured I-V characteristic: (a) 3DSF20 (b)3DSF30
Fig. 5. Transition models and simulated S-parameters: (a) W-band (b) D-band
Fig. 6. Radial stub structure models and Smith chart simulation results: (a) W-band, (b) D-band
Fig. 7. Integrated circuit structure
Fig. 8. Integrated circuit models in HFSS: (a) W-band (b) D-band
Fig. 9. Photos of two detector modules and their circuits: (a) W-band (b) D-band
Fig. 10. Photo of return loss test platform
Fig. 11. Simulated, measured, and fixed return loss: (a) W-band detector (b) D-band detector
Fig. 12. Test platform
Fig. 13. Simulated and measured voltage sensitivity: (a) W-band detector (b) D-band detector
Fig. 14. Measured linearity: (a) W-band detector, (b) D-band detector
Layer | Material | Relative Dielectric Constant | Thickness(µm) |
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Epitaxial Layer | GaAs | 12.9 | 0.2 | Buffer Layer | Perfect Conductor | 1 | 1.8 | Thin Film Substrate | GaAs | 12.9 | 5 | Passivation Layer | SiO2 | 4 | 0.5 | Anode Probe & Pad | Gold | 1 | — |
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Table 1. 3D electromagnetic model parameters of the QVSD
Type | (Ω) | (mA) | |
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3DSF20 | 14.585 | 0.051 | 1.052 | 3DSF30 | 10.672 | 0.02 | 1.059 |
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Table 2. Calculated , , and of Schottky diodes
| (Ω) | (deg) | (Ω) | (deg) | Port 1 Impedance |
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W-band | 57.24 | 11.03 | 117.89 | 64.73 | 0.611-j2.035 | D-band | 144.21 | 97.47 | 120.79 | 24.11 | 1.95+j1.552 |
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Table 3. Calculated parameters of and and optimized normalized impedances of port 1
Type | Parameters | Original value | Fixed value | Error range provided by ACST |
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3DSF20 | (fF) | 20 | 21.273 | 16 to 24 | (Ω) | 14.585 | 10.489 | — | 3DSF30 | (fF) | 30 | 24.627 | 24 to 36 | (Ω) | 10.725 | 18.986 | 5 to 20 |
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Table 4. Original and fixed parameters of and of the Schottky diodes
Ref. | W-band Frequency/GHz | Voltage Sensitivity(V/ W) | D-band Frequency/GHz | Voltage Sensitivity(V/ W) |
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[5] | 79~93 | >860 | — | — | [6] | 85~110 | Typ 750,MAX 1000 | — | — | [8] | 86~94 | >2000 | — | — | [9] | 80~104 | >2000 | 120~155 | Typ 600,MAX 1600 | This work | 85~95 | Typ 2500,MAX 2875 | 145~155 | Typ 1600,MAX 1891 |
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Table 5. Voltage sensitivity comparison