[1] S ARSLAN, S GÜNDOĞDU, A DEMIR et al. Facet cooling in high-power InGaAs/AlGaAs lasers. IEEE Photonics Technology Letters, 31, 94-97(2019).
[2] Yue SONG, Yongqiang NING, Li QIN et al. Review on the methods of preventing catastrophic optical mirror damage in high-power diode lasers. Semiconductor Optoelectronics, 41, 618-626(2020).
[3] Cuicui LIU. Study on the quantum well intermixing induced by Si impurities in InGaAs/AlGaAs high power semiconductor lasers(2020).
[4] Nan YAO, Yihao ZHAO, Suping LIU et al. High power 915 nm semiconductor lasers with non-absorbing windows. Semiconductor Technology, 40, 596-600(2015).
[5] Cuicui LIU, Nan LIN, Cong XIONG et al. Intermixing in InGaAs/AlGaAs quantum well structuresinduced by the interdiffusion of Si impurities. Chinese Optics, 13, 203-216(2020).
[6] Z JIA, H YANG, A H PERROTT et al. Study on the proximity of QWI in InP-based AlGaInAs MQWs using the IFVD method and its application in single frequency teardrop laser diodes. Optics Express, 28, 31904-31913(2020).
[7] Chunyang GUO, Ruiying ZHANG, Jiwan LIU et al. InGaAsP/InGaAsP quantum well intermixing induced by impurity free vacancy enhanced through Cu/SiO2 deposition. Semiconductor Technology, 44, 189-193(2019).
[8] K HIRAMOTO, M SAGAWA, T KIKAWA et al. High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98 μm lasers with a window structure fabricated by Si ion implantation. IEEE Journal of Selected Topics in Quantum Electronics, 5, 817-821(1999).
[9] R W KALISKI, P GAVRILOVIC, K MEEHAN et al. Photoluminescence and stimulated emission in Si-and Ge-disordered Alx Ga1-x As‐GaAs superlattices. Journal of Applied Physics, 58, 101-107(1985).
[10] J K LEE, K H PARK, D H JANG et al. Improvement of Catastrophic Optical Damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser. IEEE Photonics Technology Letters, 10, 1226-1228(1998).
[11] S Y HU, M G PETERS, D B YOUNG et al. Submilliamp-threshold InGaAs/GaAs quantum-well ridge-waveguide lasers with impurity-induced disordering, 142-143(1995).
[12] K HIRAMOTO, M SAGAWA, T KIKAWA et al. High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-/spl mu/m lasers with a window structure fabricated by Si ion implantation. IEEE Journal of Selected Topics in Quantum Electronics, 5, 817-821(1999).
[13] Haitao PENG. Improving the COD level of high-power semiconductor lasers using quantum well intermixing(2007).
[14] M E GREINER, J F GIBBONS. Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model. Applied Physics Letters, 44, 750-752(1984).
[15] K B KAHEN. Ga vacancy-assisted diffusion of Si in GaAs. Journal of Applied Physics, 66, 6176-6178(1989).
[16] Shengjie LIN, Jianjun LI, Linjie HE et al. Enhanced AlGaAs/InGaAs quantum well intermixing by the tech-nology of cycles annealing. Journal of Optoelectronics · Laser, 25, 1471-1475(2014).