• Acta Photonica Sinica
  • Vol. 51, Issue 2, 0251210 (2022)
Yuxiao WANG1、2, Lingni ZHU1、*, Li ZHONG1、3、*, Qiong QI1, Wei LI1, Suping LIU1, and Xiaoyu MA1、3
Author Affiliations
  • 1National Engineering Research Center for Opto-electronic Devices Institute of Semiconductors,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
  • 3College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.3788/gzxb20225102.0251210 Cite this Article
    Yuxiao WANG, Lingni ZHU, Li ZHONG, Qiong QI, Wei LI, Suping LIU, Xiaoyu MA. Research on Si-induced Quantum Well Intermixing Based on Cyclic Annealing(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251210 Copy Citation Text show less
    The influence of diffusion length on Ga concentration and band gap width of quantum well
    Fig. 1. The influence of diffusion length on Ga concentration and band gap width of quantum well
    The epitaxial structure of the samples
    Fig. 2. The epitaxial structure of the samples
    The PL spectra of the samples with different annealing times under 830 ℃
    Fig. 3. The PL spectra of the samples with different annealing times under 830 ℃
    The PL spectra of the samples with different annealing times under 800 ℃
    Fig. 4. The PL spectra of the samples with different annealing times under 800 ℃
    Power-current curves of devices produced under different conditions
    Fig. 5. Power-current curves of devices produced under different conditions
    Yuxiao WANG, Lingni ZHU, Li ZHONG, Qiong QI, Wei LI, Suping LIU, Xiaoyu MA. Research on Si-induced Quantum Well Intermixing Based on Cyclic Annealing(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251210
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