• Infrared and Laser Engineering
  • Vol. 50, Issue 6, 20200460 (2021)
Qiwen Zhang1、2, Qinghua Liang1, Huijun Guo1, Honglei Chen1、*, and Ruijun Ding1、*
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/IRLA20200460 Cite this Article
    Qiwen Zhang, Qinghua Liang, Huijun Guo, Honglei Chen, Ruijun Ding. Research on testing of active and passive HgCdTe APD detector in linear mode[J]. Infrared and Laser Engineering, 2021, 50(6): 20200460 Copy Citation Text show less
    (a) APD readout circuit Unit structure; (b) APD readout circuit working sequence
    Fig. 1. (a) APD readout circuit Unit structure; (b) APD readout circuit working sequence
    System of circuit test
    Fig. 2. System of circuit test
    Labview software design front panel and parameter setting
    Fig. 3. Labview software design front panel and parameter setting
    Test method flow
    Fig. 4. Test method flow
    System noise test
    Fig. 5. System noise test
    Ramp generator fixed time delay
    Fig. 6. Ramp generator fixed time delay
    DetectorI/V test results
    Fig. 7. DetectorI/V test results
    Test results of HgCdTe APD intensity information
    Fig. 8. Test results of HgCdTe APD intensity information
    (a) Circuit test sequence; (b) HgCdTe APD detector and circuit coupling test results
    Fig. 9. (a) Circuit test sequence; (b) HgCdTe APD detector and circuit coupling test results
    Ramp slope
    Fig. 10. Ramp slope
    V2d, V3d sampling results and TOF calculation results
    Fig. 11. V2d, V3d sampling results and TOF calculation results
    RMS results of TOF under multiple collections
    Fig. 12. RMS results of TOF under multiple collections
    TOF test results under different ramp delays and slopes
    Fig. 13. TOF test results under different ramp delays and slopes
    TypeGM-APDLM-APD
    Gain105-10610-103
    Dynamic rangeLowHigh
    Quenching circuitYesNo
    Intensity informationNoYes
    Continuous detection capabilityNoYes
    Table 1. Geiger and linear mode APD performance comparsion
    ParameterDescription
    TechnologyTSMC 0.18 μm 1P6M CMOS
    Temperature/K77
    Pixel/μm250×50
    Output swing/V1.5-4
    Power/mW17.5
    Table 2. Readout circuit performance parameters
    InstrumentResolutionHighest frequency
    512214 bits100 MHz
    81150A118.2 ps5 MHz
    Agilent N6700B<1 mV-
    Table 3. Instrument parameters
    ParameterValue
    Temperature/K77
    Preamp CTIA bias voltage/V1.5
    Comparator voltage/V3
    Ramp frequency/K200
    Ramp delay/μs1
    Laser pulse width/μs4.5
    APD reverse bias voltage/V2.5 (p=110 μW)
    Sampling frequency/MHz100
    Table 4. Circuit test conditions
    TypeSub-typeResolution
    SystemSystem noise179 ps
    Ramp jitter118.20 ps
    Voltage source error135.36 ps@1 mV
    CircuitCapacitance deviation100 ps@0.222 fF
    Output jitter(V2d) 24.335 ps@1 mV
    Output jitter(V3d) 833 ps@1 mV
    Table 5. Performance parameters that affect TOF resolution
    Proposed workSofradir[14]
    Temperature/K7780
    Laser:min step/ns1012.5
    Ramp200 ns max; slope 15 mV/ns 200 ns; slope 10 mV/ns
    A/D14 bits; 2 V; 100 MHz14 bits; 4 V; 100 kHz
    Resolution/cm63.2160
    Table 6. Comparison of the proposed work with the Sofradir test platform and test results
    Qiwen Zhang, Qinghua Liang, Huijun Guo, Honglei Chen, Ruijun Ding. Research on testing of active and passive HgCdTe APD detector in linear mode[J]. Infrared and Laser Engineering, 2021, 50(6): 20200460
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