Author Affiliations
1Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China2University of Chinese Academy of Sciences, Beijing 100049, Chinashow less
Fig. 1. (a) APD readout circuit Unit structure; (b) APD readout circuit working sequence
Fig. 2. System of circuit test
Fig. 3. Labview software design front panel and parameter setting
Fig. 4. Test method flow
Fig. 5. System noise test
Fig. 6. Ramp generator fixed time delay
Fig. 7. DetectorI/V test results
Fig. 8. Test results of HgCdTe APD intensity information
Fig. 9. (a) Circuit test sequence; (b) HgCdTe APD detector and circuit coupling test results
Fig. 10. Ramp slope
Fig. 11. V2d, V3d sampling results and TOF calculation results
Fig. 12. RMS results of TOF under multiple collections
Fig. 13. TOF test results under different ramp delays and slopes
Type | GM-APD | LM-APD | Gain | 105-106 | 10-103 | Dynamic range | Low | High | Quenching circuit | Yes | No | Intensity information | No | Yes | Continuous detection capability | No | Yes |
|
Table 1. Geiger and linear mode APD performance comparsion
Parameter | Description | Technology | TSMC 0.18 μm 1P6M CMOS | Temperature/K | 77 | Pixel/μm2 | 50×50 | Output swing/V | 1.5-4 | Power/mW | 17.5 |
|
Table 2. Readout circuit performance parameters
Instrument | Resolution | Highest frequency | 5122 | 14 bits | 100 MHz | 81150A | 118.2 ps | 5 MHz | Agilent N6700B | <1 mV | - |
|
Table 3. Instrument parameters
Parameter | Value | Temperature/K | 77 | Preamp CTIA bias voltage/V | 1.5 | Comparator voltage/V | 3 | Ramp frequency/K | 200 | Ramp delay/μs | 1 | Laser pulse width/μs | 4.5 | APD reverse bias voltage/V | 2.5 (p=110 μW)
| Sampling frequency/MHz | 100 |
|
Table 4. Circuit test conditions
Type | Sub-type | Resolution | System | System noise | 179 ps | Ramp jitter | 118.20 ps | Voltage source error | 135.36 ps@1 mV | Circuit | Capacitance deviation | 100 ps@0.222 fF | Output jitter(V2d)
| 24.335 ps@1 mV | Output jitter(V3d)
| 833 ps@1 mV |
|
Table 5. Performance parameters that affect TOF resolution
| Proposed work | Sofradir[14] | Temperature/K | 77 | 80 | Laser:min step/ns | 10 | 12.5 | Ramp | 200 ns max; slope
15 mV/ns
| 200 ns; slope
10 mV/ns
| A/D | 14 bits; 2 V; 100 MHz | 14 bits; 4 V; 100 kHz | Resolution/cm | 63.21 | 60 |
|
Table 6. Comparison of the proposed work with the Sofradir test platform and test results