• Optoelectronic Technology
  • Vol. 44, Issue 4, 328 (2024)
Xiaofei YANG, Jia MENG, Lei SU, Yang LI..., Wen WAN, Yaojun LYU, Juncai WANG and Jinyang DENG|Show fewer author(s)
Author Affiliations
  • Chengdu BOE Optoelectronics Technology Co., Ltd., Chengdu 611731, CHN
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    DOI: 10.12450/j.gdzjs.202404011 Cite this Article
    Xiaofei YANG, Jia MENG, Lei SU, Yang LI, Wen WAN, Yaojun LYU, Juncai WANG, Jinyang DENG. Study on PR Remain and Leakage Current in Channel Dry Etching of HADS Array Substrate[J]. Optoelectronic Technology, 2024, 44(4): 328 Copy Citation Text show less
    Microstructures of PR
    Fig. 2. Microstructures of PR
    PR morphology changes during dry etching
    Fig. 3. PR morphology changes during dry etching
    EDX element analysis of PR remain(Insets are SEM illustrations)
    Fig. 4. EDX element analysis of PR remain(Insets are SEM illustrations)
    Formation mechanism of PR remain
    Fig. 5. Formation mechanism of PR remain
    PR undercut level
    Fig. 6. PR undercut level
    Effects of ashing time on tail and TFT leakage current
    Fig. 7. Effects of ashing time on tail and TFT leakage current
    Main effect plot of the factors on Ioff variation
    Fig. 8. Main effect plot of the factors on Ioff variation
    Main effect plot of the factors on PR remain variation
    Fig. 9. Main effect plot of the factors on PR remain variation
    Optimal solution of Ioff and PR remain improvement
    Fig. 10. Optimal solution of Ioff and PR remain improvement
    Micrographs(a), (b)and FIB images(c), (d)before and after improvement of PR remain
    Fig. 11. Micrographs(a), (b)and FIB images(c), (d)before and after improvement of PR remain
    实验实验内容光刻胶残留程度
    主条件量产工艺L4
    1光刻胶灰化工艺跳过L0~L1
    2主刻蚀工艺跳过L3
    3后处理跳过L2.5
    4光刻胶灰化时间增加10 sL5+
    5主刻蚀时间增加10 sL4.5
    6后处理时间增加5 sL4.5
    7第一电极层跳过L1
    Table 1. Related processes testing of PR remain
    测试沟道干刻→光刻胶剥离后钝化层成膜后
    自动光学检测
    聚焦离子束
    Table 1. Images of PR remain related processes
    条件

    源极/偏置

    功率/kW

    压力

    /Pa

    SF6/O2

    比例

    距离

    d/μm

    光刻胶缺

    口等级

    主条件2/12450/2 000-0.11Lv5
    12/02450/2 000-0.15Lv5+
    22/22450/2 0000.02Lv1
    31/22450/2 0000.06Lv1
    42/1240/2 000-0.07Lv3
    52/21650/2 0000.07Lv0
    62/2850/2 0000.13Lv0
    Table 2. Test results of PR undercut improvement
    条件灰化时间/s光刻胶缺口等级台阶长度/μm

    高温光照

    漏电流/pA

    主条件45L5014.6

    改善

    条件

    5‑110L00.3278.4
    5‑220L00.1540.1
    5‑330L10.0616.5
    Table 3. Ashing time test for PR undercut improvement
    因子低水平高水平中心值
    偏置功率/W01 000500
    压力/Pa426.615.3
    O2/SF6比例2106
    Table 4. Experimental design of post‑treatment
    沟道刻蚀参数/指标改善前改善后

    光刻胶灰化

    工艺

    源极/偏置功率/kW2/12/2
    压力/Pa2416
    灰化时间/s40~5015~30
    光刻胶缺口程度L5L0~L1
    台阶长度/μm00.1~0.2

    后处理

    工艺

    偏置功率/kW01
    压力/Pa26.64
    O2/SF6比例1610
    Table 5. Comparison of process parameters and indexes before and after improvement of channel dry etching
    Xiaofei YANG, Jia MENG, Lei SU, Yang LI, Wen WAN, Yaojun LYU, Juncai WANG, Jinyang DENG. Study on PR Remain and Leakage Current in Channel Dry Etching of HADS Array Substrate[J]. Optoelectronic Technology, 2024, 44(4): 328
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