Xiaofei YANG, Jia MENG, Lei SU, Yang LI, Wen WAN, Yaojun LYU, Juncai WANG, Jinyang DENG. Study on PR Remain and Leakage Current in Channel Dry Etching of HADS Array Substrate[J]. Optoelectronic Technology, 2024, 44(4): 328

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- Optoelectronic Technology
- Vol. 44, Issue 4, 328 (2024)

Fig. 2. Microstructures of PR

Fig. 3. PR morphology changes during dry etching

Fig. 4. EDX element analysis of PR remain(Insets are SEM illustrations)

Fig. 5. Formation mechanism of PR remain

Fig. 6. PR undercut level

Fig. 7. Effects of ashing time on tail and TFT leakage current

Fig. 8. Main effect plot of the factors on I off variation

Fig. 9. Main effect plot of the factors on PR remain variation

Fig. 10. Optimal solution of I off and PR remain improvement

Fig. 11. Micrographs(a), (b)and FIB images(c), (d)before and after improvement of PR remain
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Table 1. Related processes testing of PR remain
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Table 1. Images of PR remain related processes
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Table 2. Test results of PR undercut improvement
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Table 3. Ashing time test for PR undercut improvement
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Table 4. Experimental design of post‑treatment
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Table 5. Comparison of process parameters and indexes before and after improvement of channel dry etching

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