Dependency of photoluminescence from SiO&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; thin f ilms containing Si&amp;lt;sub&amp;gt;1-x&amp;lt;/sub&amp;gt;Ge&amp;lt;sub&amp;gt;x&amp;lt;/sub&amp;gt; quantum dots on Ge/Si doping ratio

Kun Zhong; Zhisong Xiao; Guo’an Cheng; Xiangqian Cheng; Ruiting Zheng

doi:10.3788/COL20090709.0826

Journals >Chinese Optics Letters >Volume 7 >Issue 9 >Page 826 > Article

Chinese Optics Letters
Vol. 7, Issue 9, 826 (2009)

Dependency of photoluminescence from SiO2 thin f ilms containing Si1-xGex quantum dots on Ge/Si doping ratio

Kun Zhong¹, Zhisong Xiao², Guo’an Cheng¹, Xiangqian Cheng¹, and Ruiting Zheng¹

Author Affiliations

¹Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

²Department of Physics, School of Science, Beihang University, Beijing 100191, China

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DOI: 10.3788/COL20090709.0826 Cite this Article Set citation alerts

Kun Zhong, Zhisong Xiao, Guo’an Cheng, Xiangqian Cheng, Ruiting Zheng. Dependency of photoluminescence from SiO2 thin f ilms containing Si1-xGex quantum dots on Ge/Si doping ratio[J]. Chinese Optics Letters, 2009, 7(9): 826 Copy Citation Text

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