Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy

Da GAO; Jing-wei WANG; Cong WANG; Zhen LI; Liang-liang WU; Ming LIU

doi:10.3969/j.issn.1672-8785.2019.08.

Journals >INFRARED >Volume 40 >Issue 8 >Page 15 > Article

INFRARED
Vol. 40, Issue 8, 15 (2019)

Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy

Da GAO, Jing-wei WANG, Cong WANG, Zhen LI, Liang-liang WU, and Ming LIU

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2019.08. Cite this Article

GAO Da, WANG Jing-wei, WANG Cong, LI Zhen, WU Liang-liang, LIU Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. INFRARED, 2019, 40(8): 15 Copy Citation Text

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References

[2] He L, Wu Y, Chen L, et al. Progress in MBE growth of HgCdTe at SITP［C］. SPIE, 2002, 4795: 17-26.

GAO Da, WANG Jing-wei, WANG Cong, LI Zhen, WU Liang-liang, LIU Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. INFRARED, 2019, 40(8): 15

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