At present, high-performance mid-wave and short-wave infrared detectors with large array size have been used more and more widely. Mercury cadmium telluride(HgCdTe)material with precise control of material parameters and good material quality is a prerequisite for obtaining high-quality HgCdTe detectors. The latest research progress of silicon-based mid-wave and short-wave infrared HgCdTe materials grown by molecular beam epitaxy(MBE) in North China Research Institute of Electro-Optics is reported, and the current research status of MBE-grown HgCdTe materials is introduced.