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    Journals >Opto-Electronic Engineering >Volume 33 >Issue 4 >Page 55 > Article
    • Opto-Electronic Engineering
    • Vol. 33, Issue 4, 55 (2006)
    Temperature uniformity of the laser exposed area
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
    Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature uniformity of the laser exposed area[J]. Opto-Electronic Engineering, 2006, 33(4): 55 Copy Citation Text show less
    References

    [5] M.LAX.Temperature rise induced by a laser beam[J].Journal of Applied Physics,1977,48(9):3919-3924.

    [6] Shun Lien CHUANG.Physics of optoectronic device[M].USA:John Wiley & Sons,Inc,1995.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature uniformity of the laser exposed area[J]. Opto-Electronic Engineering, 2006, 33(4): 55
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