[1] Soci C, Zhang A, Xiang B et al. ZnO nanowire UV photodetectors with high internal gain[J]. Nano Letters, 7, 1003-1009(2007).

[2] Kind H, Yan H, Messer B et al. Nanowire ultraviolet photodetectors and optical switches[J]. Advanced Materials, 14, 158-160(2002). http://onlinelibrary.wiley.com/doi/10.1002/1521-4095(20020116)14:2%3C158::AID-ADMA158%3E3.0.CO;2-W/abstract

[3] Pearton S J, Ren F, Wang Y L et al. Recent advances in wide bandgap semiconductor biological and gas sensors[J]. Progress in Materials Science, 55, 1-59(2010). http://search.ebscohost.com/login.aspx?direct=true&db=aph&AN=44469970&site=ehost-live

[4] Zhang X M, Lu M Y, Zhang Y et al. Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film[J]. Advanced Materials, 21, 2767-2770(2009).

[5] Hou Y N, Mei Z X, Liu Z L et al. Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain[J]. Applied Physics Letters, 98, 103506(2011).

[6] Wang W, Zhang F C, Yan J F et al. Synthesis and optical properties of nano-ZnO at low temperature[J]. Laser & Optoelectronics Progress, 55, 071603(2018).

[7] Chen K J, Hung F Y, Chang S J et al. Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films[J]. Journal of Alloys and Compounds, 479, 674-677(2009).

[8] Yan Z, Song Z T, Liu W L et al. Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition[J]. Thin Solid Films, 492, 203-206(2005).

[9] Hu Y, Chen Y Q, Wu Y C et al. Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios[J]. Applied Surface Science, 255, 9279-9284(2009).

[10] Minemoto T, Negami T, Nishiwaki S et al. Preparation of Zn1-xMgxO films by radio frequency magnetron sputtering[J]. Thin Solid Films, 372, 173-176(2000).

[11] Prepelita P, Medianu R, Sbarcea B et al. The influence of using different substrates on the structural and optical characteristics of ZnO thin films[J]. Applied Surface Science, 256, 1807-1811(2010).

[12] Sans JA, SeguraA, MollarM, et al., 2004, 453/454: 251- 255.

[13] Yang P F, Wen H C, Jian S R et al. Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering[J]. Microelectronics Reliability, 48, 389-394(2008).

[14] Baccarani G, Calzolari P, Graffi S. Current transport in MSM devices[J]. Journal of Applied Physics, 45, 341-344(1974).

[15] Li Z D, Ye Y T, Wu Y F et al. A method for characterizing effective intensity of Franz-Keldysh effect in (HgCd)Te detectors[J]. Journal of Infrared & Millimeter Waves, 20, 353-355(2001).

[16] Zhang S L, Wang W, Yun F et al. Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells[J]. Applied Physics Letters, 81, 4628-4630(2002).

[17] Teke A, Dogan S, Yun F et al. GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors[J]. Solid-State Electronics, 47, 1401-1408(2003).

[18] Ozbay E, Biyikli N, Kimukin I et al. High-performance solar-blind photodetectors based on AlxGa1-xN heterostructures[J]. IEEE Journal of Selected Topics in Quantum Electronics, 10, 742-751(2004).

[19] Hagfeldt A, Graetzel M. Light-induced redox reactions in nanocrystalline systems[J]. Chemical Reviews, 95, 49-68(1995).

[20] Zhao M, Wang X, Yang G et al. Bias induced cutoff redshift of photocurrent in ZnO ultraviolet photodetectors[J]. Applied Surface Science, 359, 432-434(2015).