• Journal of Infrared and Millimeter Waves
  • Vol. 37, Issue 6, 679 (2018)
ZHANG Jing1、2, LYU Hong-Liang1、*, NI Hai-Qiao2, NIU Zhi-Chuan2, ZHANG Yi-Men1, and ZHANG Yu-Ming1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2018.06.007 Cite this Article
    ZHANG Jing, LYU Hong-Liang, NI Hai-Qiao, NIU Zhi-Chuan, ZHANG Yi-Men, ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 679 Copy Citation Text show less
    References

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    [4] Lefebvre E, Borg M, Malmkvist M, et al. (Cl2: Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs[C]. Indium Phosphide & Related Materials, 2007. IPRM'07. IEEE 19th International Conference on. IEEE, 2007: 125-128.

    [5] Moschetti G. Ultra-low power InAs/AlSb HEMTs for cryogenic low-noise applications[D]. Chalmers University of Technology, 2012.

    [6] Robinson J A, Mohney S E, Boos J B, et al. Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures[J]. Solid-state electronics, 2006, 50(3): 429-432.

    [7] Dormaier R, Zhang Q, Liu B, et al. Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors[J]. Journal of Applied Physics, 2009, 105(4):044505.

    [8] Lefebvre E, Malmkvist M, Borg M, et al. Gate-recess technology for InAs/AlSb HEMTs[J]. IEEE Transactions on Electron Devices, 2009, 56(9):1904-1911.

    [9] Moschetti G, Lefebvre E, Fagerlind M, et al. DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation[J]. Solid-State Electronics, 2013, 87:85-89.

    [10] Lefebvre E, Moschetti G, Malmkvist M, et al. Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation[J]. Semiconductor Science and Technology, 2014, 29(3):035010.

    [11] Wang J, Wang G W, Xu Y Q, et al. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure[J]. Journal of Applied Physics, 2013, 114(1): 013704.

    [12] Duffy S J, Benbakhti B, Mattalah M, et al. Low source/drain contact resistance for AlGaN/GaN HEMTs with high Al concentration and Si-HP [111]substrate [J]. ECS Journal of Solid State Science and Technology, 2017,6(11):3040-3043.

    [13] Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, et al. Impact of gate-drain spacing on low-frequency noise performance of InSitu SiN passivated InAlGaN/GaN MIS-HEMTs [J]. Transactions on Electron Device, 2017: 64(7).

    [14] Waldron N, Kim D H, Del Alamo J A. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing[J]. Semiconductor Science and Technology, 2016, 31:055003.

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    ZHANG Jing, LYU Hong-Liang, NI Hai-Qiao, NIU Zhi-Chuan, ZHANG Yi-Men, ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 679
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