• Laser & Optoelectronics Progress
  • Vol. 54, Issue 4, 40401 (2017)
Zhao Hongyu*, Wei Zhi, and Jin Guangyong
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/lop54.040401 Cite this Article Set citation alerts
    Zhao Hongyu, Wei Zhi, Jin Guangyong. Numerical Research on Photodiode Damage by Multi-Pulsed Laser Irradiation[J]. Laser & Optoelectronics Progress, 2017, 54(4): 40401 Copy Citation Text show less

    Abstract

    All of the photoelectric detectors under laser irradiation are likely to be damaged, which has a bad effect on the detector performance. In order to study the photodiode damage caused by the multi-pulsed laser irradiation, a two-dimensional axisymmetric model and a heat source model of the photodiode irradiated by the multi-pulsed laser are built. Temperature distribution of the photodiode irradiated by the 1064 nm millisecond multi-pulsed laser is simulated by the finite element software COMSOL Multiphysics. Results show that when the pulse number N of the multi-pulsed laser irradiation is 1, 3, 5, 10, 30, respectively, pulse energy density region required by the fusion damage threshold of the photodiode is 19.1-76.4 J/cm2. The research results are helpful for the millisecond multi-pulsed laser in laser processing and the application of laser protection.
    Zhao Hongyu, Wei Zhi, Jin Guangyong. Numerical Research on Photodiode Damage by Multi-Pulsed Laser Irradiation[J]. Laser & Optoelectronics Progress, 2017, 54(4): 40401
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