An improved hyper-doping process has been developed which combines the vacuum magnetron sputtering coating and the 532 nm wavelength visible nanosecond pulse laser melting to prepare the silicon thin films of titanium doping. The characteristics of hyper-doped layer and the infrared light absorption properties of silicon thin film were studied. The X-ray photoelectron spectroscopy shows that the titanium concentration of doping layer of sample is more than 1% (the corresponding titanium atom concentration is about 5×1020 cm-3), higher than the hyper-doping concentration of titanium in silicon. And the thickness of hyper-doping layer is more than 200 nm which improves obviously compared with traditional technology. The variable range of the concentration of titanium atoms is not more than 20%, and the atom distribution is more homogeneous. The glancing incidence X-ray diffraction pattern shows that the crystallinity of the silicon thin film layer is polycrystalline structure and about 25% around after pulsed laser melting. At the same time, the infrared light absorption measurement shows that the hyper-doping silicon thin film has high infrared absorptivity in wavelength larger than 1 100 nm. The highest infrared light absorption coefficient of sample is almost to 1.2×104 cm-1, which is far more than that of monocrystalline silicon. The material has obvious characteristics of sub-band absorption and shows a donor impurity energy level of the Ec-0.26 eV. The Hall effect measurement shows that the thin film layer has high carrier concentration, over 8×1018 cm-3. The Hall effect measurement shows that the thin film layer has high carrier concentration, over 8×1018 cm-3.