A new type of light-controlled dual-directional gate silicon controlled rectifier (LDGSCR) protection device is designed by using the photovoltaic effect, and the regulation and control effect of light on the maintenance window of electrostatic discharge (ESD) is studied. The photo-generated current is used to simulate the physical effects of the light control ESD design window, and a macroscopic model of the silicon controlled rectifier (SCR) of the light control device is realized. Under the simulated illumination of 1.5 V voltage, the holding current of this model is increased by 35 mA compared to the no-light condition, indicating that the use of light to adjust the ESD maintenance window can reduce the risk of latch-up of the protected circuit. The LDGSCR device is fabricated and tested using a 0.18 μm BCD process. The maximum error between the test result and the model simulation result is only 0.09 V and 0.004 A. The verification shows that the macro model can eliminate the convergence problems existing in the traditional coupled transistor circuit model, and greatly reduce the time and effort required to develop a new structure of light-controlled SCR devices.