As-doped HgCdTe films grown by Te-rich LPE

QIU Guang-Yin; ZHANG Chuan-Jie; WEI Yan-Feng; CHEN Xiao-Jing; XU Qing-Qing; YANG Jian-Rong

[1] Kalisher M H. The Behavior of Doped Hg1-xCdxTe Epitaxial Layers Grown from Hg-rich Melts[J]. J.Crystal Growth,1984,70(1-2):365-372.

[2] Shin S, Arias J M, Zandian M, et al. Enhanced Arsenic Diffusion and Activation in HgCdTe[J]. J. Electron. Mater.,1995,24(5):609-615.

[3] Bubulac L O, Viswanathan C R. Diffusion of As and Sb in HgCdTe[J]. J.Crystal Growth,1992,123(3-4):555-566.

[4] Chandra D, Weirauch D F, Schaake H F, et al. Growth of Very Low Arsenic-doped HgCdTe[J]. J. Electron. Mater.,2005,34(6):963-967.

[5] Velicu S, Grein C H, Emelie P Y, et al. MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements[J]. J. Electron. Mater.,2010,39(7):873—881.

[6] Chandra D, Schaake H F, Kinch M A, et al. Activation of Arsenic as an Acceptor in Hg1-xCdxTe under Equilibrium Conditions[J]. J. Electron. Mater.,2002,31(7):715—719.

[7] Larry Wang, Lily H.Zhang， Jun Li. New Techniques in SIMS Analysis of HgCdTe Materials[J]. J. Electron. Mater.,1999,28(6):793-798.

[8] Hansen G L, Schmit J L, Casselman T N. Energy Gap versus Alloy Composition and Temperature in Hg1-x CdxTe[J]. J. Appl. Phys.,1982,53(10):7009-7101.

[10] Lou L F, Frye W H. Hall Effect and Resistivity in Liquid-Phase-Epitaxial Layers of HgCdTe[J]. J. Appl. Phys.,1984,56(8):2253—2267.

[11] Higgins W M, Pultz G N, Roy R G, et al. Standard Relationships in the Properties of Hg1-xCdxTe[J]. J. Vac. Sci. Technol. A,1989,7(2):271-275.

[12] Shi X H, Rujirawat S, Ashokan R, et al. Ionization Energy of Acceptors in As-doped HgCdTe Grown by Molecular Beam Epitaxy[J]. Appl. Phys. Lett.,1998,73(5):638-640.