• Journal of Inorganic Materials
  • Vol. 36, Issue 9, 959 (2021)
Weide WANG1、2, Huanbei CHEN3, Shishuai LI1、2, Dongxu YAO1、*, Kaihui ZUO1, and Yuping ZENG1
Author Affiliations
  • 11. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • 22. University of Chinese Academy of Sciences, Beijing 100049, China
  • 33. Nanjing Electronic Devices Institute, Nanjing 210016, China
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    DOI: 10.15541/jim20200705 Cite this Article
    Weide WANG, Huanbei CHEN, Shishuai LI, Dongxu YAO, Kaihui ZUO, Yuping ZENG. Preparation of Silicon Nitride with High Thermal Conductivity and High Flexural Strength Using YbH2-MgO as Sintering Additive [J]. Journal of Inorganic Materials, 2021, 36(9): 959 Copy Citation Text show less
    (a) Elemental distributions of YbHM after ball milling, (b) XRD patterns of α-Si3N4 raw powder, YbHM after ball milling, and YbHM after pre-sintering, (c) elemental distributions of YbHM after pre-sintering
    1. (a) Elemental distributions of YbHM after ball milling, (b) XRD patterns of α-Si3N4 raw powder, YbHM after ball milling, and YbHM after pre-sintering, (c) elemental distributions of YbHM after pre-sintering
    XRD patterns of powder mixture of YbH2 and SiO2 with moler ratio of 1 : 1 before and after pre-sintering
    2. XRD patterns of powder mixture of YbH2 and SiO2 with moler ratio of 1 : 1 before and after pre-sintering
    (a) In-situ observation of shrinkage behaviors of the Si3N4 ceramics, (b) relative density after gas-pressure sintering, and (c) weight loss after gas-pressure sintering
    3. (a) In-situ observation of shrinkage behaviors of the Si3N4 ceramics, (b) relative density after gas-pressure sintering, and (c) weight loss after gas-pressure sintering
    XRD patterns of Si3N4 samples after being sintered at 1900 ℃ for 4 and 24 h
    4. XRD patterns of Si3N4 samples after being sintered at 1900 ℃ for 4 and 24 h
    Elemental distributions of sample YbHM after being sintered at 1900 ℃ for 12 h
    5. Elemental distributions of sample YbHM after being sintered at 1900 ℃ for 12 h
    SEM images of the polished surfaces
    6. SEM images of the polished surfaces
    EDS analysis of the intergranular phases in YbOM and YbHM specimens
    7. EDS analysis of the intergranular phases in YbOM and YbHM specimens
    (a) Thermal conductivities and (b) flexural strengths of Si3N4 samples after gas pressure sintering
    8. (a) Thermal conductivities and (b) flexural strengths of Si3N4 samples after gas pressure sintering
    AdditiveIonic radius /nmAnnealing time at 1900 ℃/hThermal conductivity /(W·m-1·K-1)
    GdH2[25]0.0944 h98.07
    12 h119.07
    24 h134.90
    YH2[23]0.0894 h101.80
    12 h123.00
    24 h131.60
    YbH20.0864 h100.20
    12 h118.90
    24 h131.15
    Table 1. Thermal conductivities of Si3N4 doped with different rare-earth hydride
    Weide WANG, Huanbei CHEN, Shishuai LI, Dongxu YAO, Kaihui ZUO, Yuping ZENG. Preparation of Silicon Nitride with High Thermal Conductivity and High Flexural Strength Using YbH2-MgO as Sintering Additive [J]. Journal of Inorganic Materials, 2021, 36(9): 959
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