Research progress on photoelectric properties of Ta5+ and Nb5+ doped β-Ga2O3single crystals

Chao WANG; Qinglin SAI; Hongji QI

doi:10.3969/j.issn.1007-5461. 2021.02.010

[1] Hu F, Chao M J, Liang E J, et al. Study on the structure and light absorption properties of Mn-doped Ga2O3 thin films[J]. Material Guide, 2009, 23(16): 16-18.

[2] Yoshioka S, Hayashi H, Kuwabara A, et al. Structures and energetics of Ga2O3 polymorphs[J]. Journal of Physics: Condensed Matter, 2007, 19(34): 346211.

[3] Playford H Y, Hannon A C, Barney E R, et al. Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction[J]. Chemistry A European Journal, 2013, 19(8): 2803-2813.

[4] Geller S. Crystal structure of β-Ga2O3[J]. Journal of Solid State Chemistry, 1977, 20(2): 209-210.

[5] Pratiyush A S, Krishnamoorthy S, Solanke S V, et al. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector[J]. Applied Physics Letters, 2017, 110(22): 221107.

[6] Villora E G, Arjoca S, Shimamura K, et al. β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices[C]. Proceedings of SPIE, 2014, 8987.

[7] Ueda N, Hosono H, Waseda R, et al. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals[J]. Applied Physics Letters, 1997, 71(7): 933-935.

[8] Higashiwaki M, Sasaki k, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates[J]. Applied Physics Letters, 2012, 100(1): 013504.

[9] Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga2O3 (001) Schottky barrier diodes fabricated on n-- Ga2O3 drift layers grown by halide vapor phase epitaxy[J]. Applied Physics Letters, 2016, 108(13): 133503.

[10] Moser N A, McCandless J P, Crespo A, et al. High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge[J]. Applied Physics Letters, 2017, 110(14): 143505.

[11] Zhang J G, Li B, Xia C T, et al. Growth and spectral characterization of β-Ga2O3 single crystals[J]. Journal of Physics and Chemistry of Solids, 2006, 67(12): 2448-1451.

[12] Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method[J]. Japanese Journal of Applied Physics, 2008, 47(11): 8506-8509.

[13] Zhang J G, Li B, Xia C T, et al. Single crystal β-Ga2O3: Cr grown by floating zone technique and its optical properties[J]. Science in China Series E-Technological Sciences, 2007, 50(1): 51-56.

[14] Suzuki N, Ohira S, Tanaka M, et al. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal[J]. Physica Status Solidi, 2007, 4(7): 2310-2313.

[15] Tomm Y, Ko J M, Yoshikawa A, et al. Floating zone growth of β-Ga2O3: A new window material for optoelectronic device applications[J]. Solar Energy Materials & Solar Cells, 2001, 66(1-4): 369-374.

[16] Villora E G, Shimamura K, Yoshikawa Y, et al. Large-size β-Ga2O3 single crystals and wafers[J]. Journal of Crystal Growth, 2004, 273(3-4): 420-426.

[17] Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202A2.

[18] Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates[J]. Applied Physics Letters, 2012, 100(1): 013504.

[19] Cui H Y, Mohamed H F, Xia C T, et al. Tuning electrical conductivity of β-Ga2O3 single crystals by Ta doping[J]. Journal of Alloys and Compounds, 2019, 788: 925-928.

[20] Yu X W, Cui H Y, Zhu M D, et al. Influence of annealing treatment on the luminescent properties of Ta: β-Ga2O3 single crystal[J]. Chinese Physics B, 2019, 28(7): 479-482.

[21] Peelaers H, Van de Walle C G. Doping of Ga2O3 with transition metals[J]. Physical Review B, 2016, 94(19): 195203.

[22] Zhou W, Xia C T, Sai Q L, et al. Controlling n-type conductivity of β-Ga2O3 by Nb doping[J]. Applied Physics Letters, 2017, 111(24): 242103.

[23] Yamaga M, Ishikawa T, Yoshida M, et al. Polarization of optical spectra in transparent conductive oxide β-Ga2O3[J]. Physica Status Solidi C-Current Topics in Solid State, 2011, 8(9): 2621-2624.

[24] Quoc D H, Frauenheim T, Deak P. Origin of photoluminescence in β-Ga2O3[J]. Physical Review B, 2018, 97(11): 115163.

[25] Nakazawa A, Yasukawa D, Wakai H, et al. Time- resolved spectroscopy of luminescence in Cu- and Cr- doped β-Ga2O3[J]. Physica Status Solidi, 2013, 10(11): 1584-1587.