Xiao-Chen Yang, Yan Xing. Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures[J]. Chinese Physics B, 2020, 29(8):
- Chinese Physics B
- Vol. 29, Issue 8, (2020)
Fig. 1. Schematic structure of Inx Ga1 – x N/GaN spherical CSQD.
Fig. 2. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions as a function of incident photon energy in In0.5Ga0.5N/GaN (5 nm/3 nm) CSQD with and without impurity.
Fig. 3. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions each as a function of incident photon energy in In0.5Ga0.5N/GaN (5 nm/3 nm) CSQD with and without the BEF.
Fig. 4. (a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions each as a function of incident photon energy for x = 0.2, 0.5, 0.8 in Inx Ga1 – x N/GaN (5 nm/3 nm) CSQD with impurity and BEF.
Fig. 5. (a) Total ACs and (b) RICs versus incident photon energy for 1s–1p, 1p–1d, and 1d–1f transitions for R c = 2.5, 3, and 5 nm in In0.5Ga0.5N/GaN (R c/3 nm) CSQDs with the impurity and the BEF.
Fig. 6. Total ACs versus incident photon energy of 1s–1p, 1p–1d, and 1d–1f transitions for various values of the incident optical intensity I in In0.5Ga0.5N/GaN (5 nm/3 nm) CSQDs (a) with Z = 0 and BEF = 0, (b) with Z = 1 and BEF = 0, and (c) with Z = 1 and BEF ≠ 0.
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