• Laser & Optoelectronics Progress
  • Vol. 55, Issue 9, 91601 (2018)
[in Chinese]1、2、*
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop55.091601 Cite this Article Set citation alerts
    [in Chinese]. Electronic Structure and Optical Properties of Rare-Earth Element (La, Y) Doped Ca2Si[J]. Laser & Optoelectronics Progress, 2018, 55(9): 91601 Copy Citation Text show less

    Abstract

    The geometric structure, energy band structure, density of electronic state, and optical properties of rare-earth elements La, Y single-doped and co-doped Ca2Si are calculated by the first principles. The calculation results show that, the La single doping and La/Y codoping make the cell volume of Ca2Si increase and the bandgap become narrow, while the Y doping does make the cell volume decrease and the bandgap become wide. After the La, Y single doping and codoping, the Fermi level enters the conduction band, and Ca2Si becomes an n-type semiconductor, and the dielectric function, extinction coefficient, and absorption edge of Ca2Si all move towards the low energy direction, and both the refractivity and reflectivity increase.
    [in Chinese]. Electronic Structure and Optical Properties of Rare-Earth Element (La, Y) Doped Ca2Si[J]. Laser & Optoelectronics Progress, 2018, 55(9): 91601
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