• Microelectronics
  • Vol. 53, Issue 5, 807 (2023)
LU Zhengwei1、2, SU Yongbo1、2, ZHEN Wenxiang1、2, DING Wuchang1、2, WEI Haomiao2, CAO Shurui1、2, DING Jianjun1、2, and JIN Zhi1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.230055 Cite this Article
    LU Zhengwei, SU Yongbo, ZHEN Wenxiang, DING Wuchang, WEI Haomiao, CAO Shurui, DING Jianjun, JIN Zhi. Design of a Power Amplifier Using CB Stack Based on InP DHBT[J]. Microelectronics, 2023, 53(5): 807 Copy Citation Text show less

    Abstract

    A single-stage MMIC PA with a center frequency of 75 GHz was designed, which was fabricated based on the InP DHBT in a 0.8 μm process. The ft/fmax of the device was 171/250 GHz. This circuit used a two-layer common-base stack structure, in which the lower CB layer was directly grounded at the base. The emitter at the input port was supplied with a negative voltage of -0.96 V, and the bias voltage Vc2 was 4 V. In order to increase the output power, the devices in the upper and lower layers were in parallel with four fingers. Furthermore, the same devices were used to design a stack structure with a common emitter below. The CB stack was compared with international stack structure circuits manufactured in advanced InP processes , while the CB stack structure had better performances than the CE stack in terms of gain and peak PAE.
    LU Zhengwei, SU Yongbo, ZHEN Wenxiang, DING Wuchang, WEI Haomiao, CAO Shurui, DING Jianjun, JIN Zhi. Design of a Power Amplifier Using CB Stack Based on InP DHBT[J]. Microelectronics, 2023, 53(5): 807
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