• Acta Photonica Sinica
  • Vol. 34, Issue 9, 1385 (2005)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation on Gain and Noise Characteristic of High Concentration Tellurite-based EDFA[J]. Acta Photonica Sinica, 2005, 34(9): 1385 Copy Citation Text show less
    References

    [1] Makoto Yamada. Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76 nm. IEEE Photonics Technology Letters, 1998,10(9): 1244~ 1246

    [2] Mori A. Gain flatterned Er3+ 3 + doped tellurite fibre amplifier for WDM signals in the 1581 1616 nm wavelength region. Electronics Letters, 2000,36 (7): 621~622

    [3] Piotr Myslinski. Effects of concentration on the performance of erbium-doped fiber amplifiers. Journal of Lightwave Technology, 1997,15(1): 112~120

    [4] Shen S. Gain characteristics of Er3+/Ce3+ codoped tellurite short fibre amplifier pumped at 980nm.Electronics Letters, 2003,39(25): 1797~ 1799

    [5] Hu Yongdan, Jiang Shibin . Numerical analyses of the population dynamics and determination of the upconversion coefficients in a new high erbium-doped tellurite glass. J Opt Soc Am B, 2001,18 (12): 1928 ~1934

    [6] Conti G Nunzi, Tikhomirov V K. Characterization of ionexchanged waveguides intungsten tellurite and zinc tellurite Er3+ -doped glasses. Optical Enginerring, 2003,42(10) :2805~2811

    [8] Blixt P, Nilsson J, Carlnas C. Concentration-dependent upconversion in Er3+-doped fiber amplifiers Experiments and modeling. IEEE Photon Technol Lett , 1991,3 (8):996~998

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation on Gain and Noise Characteristic of High Concentration Tellurite-based EDFA[J]. Acta Photonica Sinica, 2005, 34(9): 1385
    Download Citation