• Acta Photonica Sinica
  • Vol. 34, Issue 9, 1385 (2005)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation on Gain and Noise Characteristic of High Concentration Tellurite-based EDFA[J]. Acta Photonica Sinica, 2005, 34(9): 1385 Copy Citation Text show less

    Abstract

    Numerical simulation on high concentration tellurite EDFA is based on four energy-level model.The main characteristic of gain and noise figure both in C-band and L-band is presented.The bandwidth achieves 85 nm when gain of amplifier both in C-band and L-band achieves above 20 dB.Furthermore,the degradation of gain and noise characteristic caused by the effect of upconversion which is brought by high concentration is analyzed.The degradation is 4% in C-band and 10% in L-band.The degradation is decreasing when the pump power increasing.It is just 0.1% when the two-stage amplifier is bi-directional pumped.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation on Gain and Noise Characteristic of High Concentration Tellurite-based EDFA[J]. Acta Photonica Sinica, 2005, 34(9): 1385
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