• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 1, 75 (2005)
[in Chinese]1, [in Chinese]2、3, and [in Chinese]1、2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 75 Copy Citation Text show less
    References

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    [2] Lerous M, Grandjean N, Laugt M, et al. Quantum confined stark effect duo to build-in internal polarization fields in (Al,Ga)N/GaN quantum wells [J]. Phys. Rev. B, 1998, 58(20): R13371-R13374.

    [3] Ambacher O, Juant J, Sherly J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures [J]. J. Appl. Phys., 1999, 85(6): 3222.-3233.

    [4] Ambacher O, Dimitrov R, Stutzmann M, et al. Role of spontaneous and piezoelectric polarization induced effects in group- Ⅲ nitride based heterostructures and devices [J]. Phys. Stat. Sol. (b), 1999, 216: 381-389.

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    [16] Willardson R K, Weber E R, et al. High pressure in semiconductor physics I (in: Semiconductor and Semimetal,55) [M]. New York: Academic Press, 1998. 273, 283.

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    [18] Zhu Jialin, Tang Daohua, Xiong Jiajiong. Subbands and excitons in GaAs/Ga1-xAlxAs quantum wells with different shapes in an electric field [J]. Phys. Rev. B, 1989, 39(12): 8609-8615.

    [in Chinese], [in Chinese], [in Chinese]. Pressure effect on the polarization of electronic excited state in a GaN/GaAlN quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 75
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