• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 5, 601 (2004)
[in Chinese]1、*, [in Chinese]2, [in Chinese]3, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of a new short pulse width XeCl laser with high power based on quartz films and laser pulse profiles analysis[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 601 Copy Citation Text show less
    References

    [1] Efthimiopoulos T,Zigos D.Two-photon dissociation of HgBr2 as passive mode locking mechanism of a long-pulse XeCl excimer laser [J].Appl.Phys.B-Lasers and Optics,2002,75(4-5):515-519.

    [2] Martino M,Luches A,Fernandez M.Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation [J].Appl.Phys.,2001,34 (17):2606-2609.

    [3] Skakun V S,Lomaev M I,Tarasenko V F,et al.KrCl and XeCl exciplex glow discharge lamps with an output power of similar to 1.5 kW.Tech.Phys.Lett.,2002,28(11):899-801.

    [4] Ito S.Continuous operation up to 3 kHz in a discharge-pumped XeCl excimer laser [J].Appl.Phys.,1996,63(1):1-7.

    [5] Saito T,Ito S.Long lifetime operation of an ArF-excimer laser [J].Appl.Phys.,1996,63(2):229-235.

    [6] Berry G A.On the long pulse operation of an x-ray preionzed gas discharge pumped ArF excimer laser [J].Appl.Phys.Lett.,1999,75:23-24.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of a new short pulse width XeCl laser with high power based on quartz films and laser pulse profiles analysis[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 601
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