STUDY ON THE JUNCTIONS OF SWIR HgCdTe PHOTO DIODES AT ROOM TEMPERATURE WITH LASER BEAM INDUCED CURRENT

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 1 >Page 11 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 1, 11 (2005)

STUDY ON THE JUNCTIONS OF SWIR HgCdTe PHOTO DIODES AT ROOM TEMPERATURE WITH LASER BEAM INDUCED CURRENT

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON THE JUNCTIONS OF SWIR HgCdTe PHOTO DIODES AT ROOM TEMPERATURE WITH LASER BEAM INDUCED CURRENT[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 11 Copy Citation Text

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References

[1] Rogalski A. Infrared detectors: Status and Trends [J]. Progress in Quantum Electronics, 2003, 27:59-210.

[3] Musca C A, Redfern D A, Dell J M, et al. Laser beam induced current as a tool for HgCdTe photodiode characterization[ J]. Microelectronics Journal, 2000,31:537-544.

[4] CAI Wei-Ying. The characteristics of imaging spectrum for infrared devices [D]. Shanghai: Doctor's dissertation of Shanghai Institute of Technical Physics, 2003:53-100.

[5] Jacques I Pankove. Optical Processes in Semiconductors [M]. New Jersey: Prentice-Hall, 1971: 303-335.

[6] Redfern D A, Thomas J A, Musca C A , et al. Diffusion length measurements in p-HgCdTe using laser beam induced current [J]. Journal of Electronic Materials, 2001,30(6):696-703.

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