[1] Asif Khan M, Kuznia J N, Olson D T, et al. Mirowave performance of a 0.25μm gate AlGaN/GaN heterostructure field effect transistor. Appl.Phys.Lett., 1994, 65: 1121
[2] Irmer G, Toporov V V, Bairamov B H, et al. Determination of the charge carrier concentration and mobility in n-GaP by Raman spectroscopy. Phys.Stat.Sol., 1983, B119: 595
[3] Li Z-F, Lu W, Ye H-J, et al. Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy. J.Appl.Phys., 1999, 86: 2691
[4] Klein M V, Ganguly B N, Colwell P J. Theoretical and experimental study of Raman scattering from coupled LO-phonon-plasmon modes in silicon carbide. Phys.Rev., 1972, B6: 2380
[5] Kozawa T, Kachi T, Kano H, et al. Raman scattering from LO phonon-plasmon coupled modes in gallium nitride. J.Appl.Phys., 1994, 75: 1098
[6] Sze S M. Physics of Semiconductor Devices, 2nd edition. New York: John Willey&Sons, 1981, 29
[7] Ridley B K. Quantum Processes in Semiconductors. Oxford: Clarendon Press, 1982, 115
[8] Demangeot F, Frandon J, Renucci M A, et al. Interplay of electrons and phonons in heavily doped GaN epilayers. J.Appl.Phys., 1997, 82: 1305
[9] Demangeot F, Frandon J, Renucci M A, et al. Coupled longitudinal optic phonon-plasmon modes in p-type GaN. Sol.Stat.Commun., 1998, 106: 491
