Indium selenide (InSe) is a III-VI group semiconductor with interesting physical properties and has wide potential applications in the fields of photovoltaics, optics, thermoelectrics, and so on. However, the production of large-size InSe crystal is difficult due to the inconsistent melting of In and Se elements and peritectic reactions between InSe, In₆Se₇ and In₄Se₃ phases. In this work, a zone melting method, which has advantages of low cost and solid-liquid interface optimization, is employed for InSe crystal preparation. Because the initial mole ratio of In to Se is of great importance to InSe crystal growth, the non-stoichiometric In_0.52Se_0.48 solution was precisely used for growth based on the peritectic reaction of In-Se system, resulting in a InSe crystal productivity ratio at about 83%. An ingot with dimensions ϕ27 mm×130 mm is obtained with a typical slab-like InSe crystal in the size of ϕ27 mm×50 mm. The successfully peeled cleavage plane exhibits the good single-crystalline character as only (00l) peaks are detected in the X-ray diffraction pattern. This crystal has a hexagonal structure, and its elements are distributed uniformly in the matrix with transmittance of ~55.1% at 1800 nm wavelength, band gap energy of about 1.22 eV, a maximum electrical conductivity (σ) of about 1.55×10² S·m^-1 along the (001) direction, and a lowest thermal conductivity (κ) of about 0.48 W·m^-1·K^-1 perpendicular to the (001) direction at 800 K. These results imply that the zone melting method is indeed an effective approach for fabricating large-size InSe crystal, which could be applied for various fields. Above measured electrical and thermal behaviors are expected to provide a significant reference for InSe crystal application in the future.