[3] BETHEA C G,LEVINE B F.Long wavelength infrared 128×128AlGaAs/GaAs quantum well infrared camera and imaging system[J].IEEE Trans on Electron Device,1993,40:1957.
[6] STERN F.Calculated energy levels and optical absorption in ntype Si accumulation layers at low temperature[J].Phys Rev Lett,1974,33 (16):960-963.
[7] ALLEN S J,TSUI D C,VINTER B,et al.On the absorption of infrared radiation by electrons in semiconductor inversion layers[J].Solid State Commun,1976,20 (4):425-428.
[8] LEVINE B F,CHOI K K,BETHEA C G,et al.New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices[J].Appl Phys Lett,1987,50:1092.
[9] YU L S,LIS S,WANG Y H.A study of coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs muitiquantum well infrared detector[J].Journal of Applied Physics,1992,72(6):2105-2109.
[10] BANDARA S V,GUNAPALA S D,LIU J K,et al.Two dimensional periodic grating light coupling in quantum well infrared photodetectors[C]// Proceedings of SPIE,Inffared Technology and Applications XXIII,1997,3061:758-763.
[11] SARUSI G,LEVINE B F,PEARTON S J,et al.Improved performance of quantum well infrared photodetectors using random scattering optical coupling[J].Appl Phys Lett,1994,64(8):960-962.
[12] CHEN C J,CHOI K K,CHANG W H,et al.Corrugated quantum well infrared photodetectors[C]//Proceedings of SPIE,Infrared Detectors and Focal Plane Arrays V,1998,3379:441-452.
[15] MASALKAR P,NISHINO H,YAMAMOTO K,et al.Simulation of optical coupling in quantum-well infrared photodetectors[C]//Proceedings of SPIE,International Society for Optical Engineering,1999,3625:552 -559.
