The Study of 1.067μm Laser Characteristics of Nd3+:KGd(WO4)2 Crystals

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Journals >Chinese Journal of Quantum Electronics >Volume 18 >Issue 4 >Page 340 > Article

Chinese Journal of Quantum Electronics
Vol. 18, Issue 4, 340 (2001)

The Study of 1.067μm Laser Characteristics of Nd3+:KGd(WO4)2 Crystals

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of 1.067μm Laser Characteristics of Nd3+:KGd(WO4)2 Crystals[J]. Chinese Journal of Quantum Electronics, 2001, 18(4): 340 Copy Citation Text

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References

[2] Petevmann K,Mitzscherlich P. Spectroscopic and laser properties of Cr3+-doped Al2(WO4)3 and Sc2(WO4)3 [J].IEEE J. Quantum Electronics,1987,QE-23(7): 1122～1126

[5] Kushawaha V,Banerjee A,Major L. High-efficiency flashlamp-pumped Nd3+:KGW laser [J]. Appl. Phys.,1993,B56:239～242

[6] Kushawaha V,Michael A,Major L. Effect of Nd concentration on the Nd3+:KGW laser [J]. Appl. Phys. 1994,B58:533～535

[7] Stankov K A,Marowsky G. High-efficiency multicolour Q-switched Nd3+:KGd(WO4)2 laser [J]. Appl. Phys.,1995,B61:213～215

[8] Tu C et al. Crystal growth of KGd(WO4)2:Nd3+ [J]. J. Crystal Growth,1995,152:235～237

[9] Walter Koechner. Solid State Laser Engineering [M]. Springer-Verlay,1976. 74～122

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