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Photonics Research
Vol. 8, Issue 10, 1648 (2020)

56 Gbps high-speed Ge electro-absorption modulator

Zhi Liu^1、2, Xiuli Li^1、2, Chaoqun Niu^1、2, Jun Zheng^1、2, Chunlai Xue^1、2, Yuhua Zuo^1、2, and Buwen Cheng^{1、2、3、*}

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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DOI: 10.1364/PRJ.401140 Cite this Article Set citation alerts

Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng. 56 Gbps high-speed Ge electro-absorption modulator[J]. Photonics Research, 2020, 8(10): 1648 Copy Citation Text

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References

[1] M. Paniccia. Integrating silicon photonics. Nat. Photonics, 4, 498-499(2010).

[2] H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, W. Yao, L. Shen, G. Roelkens, J. Van Campenhout. −1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt. Express, 24, 4622-4631(2016).

[3] L. Virot, D. Benedikovic, B. Szelag, C. Alonso-Ramos, B. Karakus, J.-M. Hartmann, X. Le Roux, P. Crozat, E. Cassan, D. Marris-Morini, C. Baudot, F. Boeuf, J.-M. Fédéli, C. Kopp, L. Vivien. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. Opt. Express, 25, 19487-19496(2017).

[4] Z. Liu, F. Yang, W. Wu, H. Cong, J. Zheng, C. Li, C. Xue, B. Cheng, Q. Wang. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J. Lightwave Technol., 35, 5306-5310(2017).

[5] Q. Xu, B. Schmidt, S. Pradhan, M. Lipson. Micrometre-scale silicon electro-optic modulator. Nature, 435, 325-327(2005).

[6] G. T. Reed, G. Mashanovich, F. Y. Gardes, D. J. Thomson. Silicon optical modulators. Nat. Photonics, 4, 518-526(2010).

[7] X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, J. Yu. High-speed, low-loss silicon Mach–Zehnder modulators with doping optimization. Opt. Express, 21, 4116-4125(2013).

[8] E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. S. Hosseini, A. Biberman, M. R. Watts. An ultralow power athermal silicon modulator. Nat. Commun., 5, 11(2014).

[9] S. Pathak, M. Vanslembrouck, P. Dumon, D. V. Thourhout, P. Verheyen, G. Lepage, P. Absil, W. Bogaerts. Effect of mask discretization on performance of silicon arrayed waveguide gratings. IEEE Photon. Technol. Lett., 26, 718-721(2014).

[10] J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, J. Michel. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators. Nat. Photonics, 2, 433-437(2008).

[11] N. N. Feng, D. Z. Feng, S. R. Liao, X. Wang, P. Dong, H. Liang, C. C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, M. Asghari. 30 GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide. Opt. Express, 19, 7062-7067(2011).

[12] D. Feng, W. Qian, H. Liang, C. Kung, Z. Zhou, Z. Li, J. S. Levy, R. Shafiiha, J. Fong, B. J. Luff, M. Asghari. High-speed GeSi electroabsorption modulator on the SOI waveguide platform. IEEE J. Sel. Top. Quantum Electron., 19, 64-73(2013).

[13] S. A. Srinivasan, M. Pantouvaki, S. Gupta, H. T. Chen, P. Verheyen, G. Lepage, G. Roelkens, K. Saraswat, D. V. Thourhout, P. Absil, J. V. Campenhout. 56 Gb/s germanium waveguide electro-absorption modulator. J. Lightwave Technol., 34, 419-424(2016).

[14] L. Mastronardi, M. Banakar, A. Z. Khokhar, N. Hattasan, T. Rutirawut, T. D. Bucio, K. M. Grabska, C. Littlejohns, A. Bazin, G. Mashanovich, F. Y. Gardes. High-speed Si/GeSi hetero-structure electro absorption modulator. Opt. Express, 26, 6663-6673(2018).

[15] J. Verbist, M. Verplaetse, S. A. Srinivasan, J. Van Kerrebrouck, P. De Heyn, P. Absil, T. De Keulenaer, R. Pierco, A. Vyncke, G. Torfs, X. Yin, G. Roelkens, J. Van Campenhout, J. Bauwelinck. Real-time 100 Gb/s NRZ and EDB transmission with a GeSi electroabsorption modulator for short-reach optical interconnects. J. Lightwave Technol., 36, 90-96(2018).

[16] Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, M. Hochberg. A high-responsivity photodetector absent metal-germanium direct contact. Opt. Express, 22, 11367-11375(2014).

[17] J. F. Lampin, L. Desplanque, F. Mollot. Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect. Appl. Phys. Lett., 78, 4103-4105(2001).

[18] A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout. 50 Gb/s C-band GeSi waveguide electro-absorption modulator. Optical Fiber Communication Conference, Tu3D.7(2016).

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Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng. 56 Gbps high-speed Ge electro-absorption modulator[J]. Photonics Research, 2020, 8(10): 1648

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