• Photonics Research
  • Vol. 8, Issue 10, 1648 (2020)
Zhi Liu1,2, Xiuli Li1,2, Chaoqun Niu1,2, Jun Zheng1,2..., Chunlai Xue1,2, Yuhua Zuo1,2 and Buwen Cheng1,2,3,*|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • show less
    DOI: 10.1364/PRJ.401140 Cite this Article Set citation alerts
    Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng, "56 Gbps high-speed Ge electro-absorption modulator," Photonics Res. 8, 1648 (2020) Copy Citation Text show less
    (a) Schematic view of the EAM, (b) schematic cross-sectional structure of the EAM.
    Fig. 1. (a) Schematic view of the EAM, (b) schematic cross-sectional structure of the EAM.
    (a) Cross-sectional optical field distribution of the EAM, (b) loss of the fundamental TE mode of the device’s structure, (c) electric field distribution in the EAM at −2 V, and (d) extracted electric field distributions at the center of the Ge waveguide at 0 V and −2 V. The inset of (b) is the optical field distribution of the light (1610 nm) coupling into/out of the EAM.
    Fig. 2. (a) Cross-sectional optical field distribution of the EAM, (b) loss of the fundamental TE mode of the device’s structure, (c) electric field distribution in the EAM at 2  V, and (d) extracted electric field distributions at the center of the Ge waveguide at 0 V and 2  V. The inset of (b) is the optical field distribution of the light (1610 nm) coupling into/out of the EAM.
    (a) Top-view optical micrograph of the EAMs, (b) cross-sectional SEM image of the EAM.
    Fig. 3. (a) Top-view optical micrograph of the EAMs, (b) cross-sectional SEM image of the EAM.
    Typical I-V curves (with or without light input) and C-V curve of the EAM.
    Fig. 4. Typical I-V curves (with or without light input) and C-V curve of the EAM.
    (a) Optical transmission loss of the EAM (at various bias voltages) and without EAM, (b) IL and dc ER curves (at various bias voltages) of the EAM.
    Fig. 5. (a) Optical transmission loss of the EAM (at various bias voltages) and without EAM, (b) IL and dc ER curves (at various bias voltages) of the EAM.
    S21 and S11 curves of the EAM at various bias voltages. The inset is the equivalent circuit model of the EAM.
    Fig. 6. S21 and S11 curves of the EAM at various bias voltages. The inset is the equivalent circuit model of the EAM.
    56 Gbps eye diagrams of the EAM at 1600 and 1610 nm.
    Fig. 7. 56 Gbps eye diagrams of the EAM at 1600 and 1610 nm.
    Modulator TypeRefs.SOI Platform (μm)Footprint (μm2)Wavelength (nm)Voltage Swing (V)Optical Bandwidth (nm)3 dB Bandwidth (GHz)Energy per Bit (fJ/bit)DC ER (dB)IL (dB)Dynamic ER (dB)Max. Bit Rate (Gbps)
    GeSi EAM[12]350×1015503>40381475.94.84.528
    Ge EAM[13]0.2240×1016152>22.5>5012.84.64.93.356
    GeSi EAM[18]0.2240×101560230>5013.84.24.43.050
    GeSi EAM[14]0.840×5015664/56445.610.65.256
    Ge EAMThis work0.2240×1516103>3036453.66.22.756
    Table 1. Performance Comparison for Ge or GeSi EAMs