• Journal of Infrared and Millimeter Waves
  • Vol. 26, Issue 3, 164 (2007)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. NUMERICAL MODELING OF MIDDLE WAVELENGTH TWO-COLOR PHOTOVOLTAIC HgCdTe DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2007, 26(3): 164 Copy Citation Text show less
    References

    [1] Rogalski Antoni.Infrared detectors:status and trends[J].Progress in Quantum Electronics.2003,27:59-210.

    [4] Jo N H,Yoo S D,Ko B G,et al.Two-dimensional numerical simulation of HgCdTe infrared detectors[J].SPIE,1998,3436:50-60.

    [6] Selberherr Seigfried.Analysis and simulation of semiconductor devices[M],Austria:Spinger-Verlag Wien New York Press,1984,41-42.

    [7] Rogalski Antonl,Adamiec Krzysztof,Rutkowski Jaroslaw.Narrow-gap semiconductor photodiodes[M],USA:SPIE Press,2000,15-82.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. NUMERICAL MODELING OF MIDDLE WAVELENGTH TWO-COLOR PHOTOVOLTAIC HgCdTe DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2007, 26(3): 164
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