[1] Crump P,Dong W M,Grimshaw M,et al.100-W+diode laser bars show>71% power conversion from 790-nm to 1000-nm and have clear route to>85%[J].SPIE,2007,6456:64560M
[2] Peters M,Rossin V,Everett M,et al.High-power,high-efficiency laser diodes at JDSU[J].SPIE,2007,6456:64560G
[3] John G Endfiz,Mitral Vakili,Gerald S Browder,et al.High power diode laser arrays[J].IEEE Journal of quantum electronics,1992,28(4):952-965
[5] Panchal C J,Mistry S N,Patel N K M,et al.Facet coating of diode laser for high power and high reliable operation[J].SPIE,2003,4829:18-19
[6] Higashi T,Ogita S,Soda H,et al.Optimum Asymmetric Mirror Facet Structure for High-efficiency Semiconductor Lasers[J].IEEE J.Quantum Electron,1993,29(8):1918-1923