[1] Schubert E F. Light Emitting Diodes [M].New York: Cambridge,2006.1-23.
[2] Nakamura S,Fasol G. The Blue Laser Diode [M].Berlin: Springer,1997.1-15.
[3] Shul R J,Zhang L,Baca A G,et al. Inductively coupled plasma-induced etch damage of GaN pn junctions [J].J. Vac. Sci. Technol. A,2000,18: 1139.
[4] Kroger F A,Diemer G,Klasens H A. Nature of an ohmic metal-semiconductor contact [J].Phy. Rev.,1956,103:279.
[5] Hirsch L,Barriere A S. Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy [J].J. Appl. Phys.,2003,94: 5014-5020.
[6] Morkoc H. Nitride Semiconductors and Devices [M].Berlin: Springer,1999.2-25.
[7] Yu A Y C. Electron tunneling and contact resistance of metal-silicon contact barriers [J].Solid-State Electronics,1970,13: 239-247.
[8] Hattori K,Izumi Y. The electrical characteristics of degenerate InP Schottky diodes with an interfacial laye [J].J. Appl. Phys.,1982,53: 6906-6910.
[9] Fu D J,Kwon Y H,Park C J,et al. GaN metaloxidesemiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation [J].Appl. Phys. Lett.,2002,80: 446-448.
[10] Suzue K,Mohammad S N,Fan Z F,et al. Electrical conduction in platinum-gallium nitride schottky didoes [J].J. Appl. Phys.,2004,80: 4467-4478.
