Peng SUN, Jianyu FU, Gaobo XU, Mingzheng DING, Qionghua ZHAI, Huaxiang YIN, Dapeng CHEN. Research on Structure Simulation of Silicon Pixel Sensor Guard Ring for Advanced Light Source[J]. Acta Photonica Sinica, 2021, 50(12): 1228002
- Acta Photonica Sinica
- Vol. 50, Issue 12, 1228002 (2021)
Fig. 1. Schematic of the edge position of the sensor
Fig. 2. Sensor process flow chart
Fig. 3. Sensor edge simulation model
Fig. 4. Pixel and current collecting ring dark current
Fig. 5. Current density distribution diagram of equidistant guard ring structure （2 000 V bias）
Fig. 6. Surface potential distribution （2 000 V bias）
Fig. 7. Surface electric field intensity distribution （2 000 V bias）
Fig. 8. Al overhang of structure 2
Fig. 9. Current collecting ring and pixel leakage under different Al overhang structures
Fig. 10. Surface potential distribution under different Al overhang structures （2 000 V bias）
Fig. 11. Surface electric field distribution under different Al suspension structures （2 000 V bias）
Fig. 12. Leakage of current collecting ring under different number of guard rings
Fig. 13. Electric field distribution near the current collecting ring junction area （1 000 V bias）
Fig. 14. Surface potential distribution of different guard ring structures （1 000 V bias）
Fig. 15. The breakdown voltage of the current collecting ring changes with the number of guard rings
Fig. 16. Distribution of potential drop near the first guard ring （1 000 V bias）
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Table 1. Substrate parameters and some structural parameters used in the simulation model construction
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