The guard ring structure on the silicon pixel sensor is beneficial to improve the high voltage withstand performance of the sensor. In order to evaluate the protection effect of the guard ring structure on the silicon pixel sensor, three kinds of guard ring structures are simulated and analyzed. Two-dimensional modeling of the three guard ring structures was carried out by Technology Computer Aided Design, and the I-V characteristics of the three guard ring structures were simulated using the electrical model built in the software. The existence of the current collecting ring can make the pixel withstand high voltage, and the unequal-spaced guard ring, The different space guard ring, the inner and outer equidistant Al suspension of the guard ring, and the multiple guard ring structures are beneficial to further increase the breakdown voltage of the sensor.