Synthesis of Monolayer MoS2(1-x)Se2x Alloy and Photoelectric Properties of MoS2(1-x)Se2x (x=0. 25) Field-Effect Transistor

Peiru Zhang; Huan Liu; Jiaxing Hu; Lier Deng

doi:10.3788/AOS202242.1616001

Journals >Acta Optica Sinica >Volume 42 >Issue 16 >Page 1616001 > Article

Acta Optica Sinica
Vol. 42, Issue 16, 1616001 (2022)

Synthesis of Monolayer MoS_2(1-_x₎Se₂_x Alloy and Photoelectric Properties of MoS_2(1-_x₎Se₂_x (x=0. 25) Field-Effect Transistor

Peiru Zhang, Huan Liu^*, Jiaxing Hu, and Lier Deng

Author Affiliations

School of Opto-Electronic Engineering, Xi'an Technological University, Xi'an 710021, Shaanxi , China

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DOI: 10.3788/AOS202242.1616001 Cite this Article Set citation alerts

Peiru Zhang, Huan Liu, Jiaxing Hu, Lier Deng. Synthesis of Monolayer MoS_2(1-_x₎Se₂_x Alloy and Photoelectric Properties of MoS_2(1-_x₎Se₂_x (x=0. 25) Field-Effect Transistor[J]. Acta Optica Sinica, 2022, 42(16): 1616001 Copy Citation Text

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Growth diagram of monolayer MoS2(1-x)Se2x prepared by chemical vapor deposition

Fig. 1. Growth diagram of monolayer MoS_2(1-_x₎Se₂_x prepared by chemical vapor deposition

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Morphology of monolayer MoS2(1-x)Se2x alloy grown by different mSe/mS under optical microscope. (a) mSe/mS = 1/11; (b) mSe/mS = 1/5; (c) mSe/mS = 1/3; (d) mSe/mS = 1/2; (e) mSe/mS = 5/7; (f) mSe/mS = 1/1

Fig. 2. Morphology of monolayer MoS_2(1-_x₎Se₂_x alloy grown by different m_Se/m_S under optical microscope. (a) m_Se/m_S = 1/11; (b) m_Se/m_S = 1/5; (c) m_Se/m_S = 1/3; (d) m_Se/m_S = 1/2; (e) m_Se/m_S = 5/7; (f) m_Se/m_S = 1/1

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Fig. 3. AFM image at junction of monolayer MoS_2(1-_x₎Se₂_x and SiO₂/Si substrate

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Fig. 4. Relationship between size of monolayer MoS_2(1-_x₎Se₂_x and m_Se/m_S

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Fig. 5. SEM-EDS images of monolayer MoS_2(1-_x₎Se₂_x alloy with different components. (a) x=0.23; (b) x=0.24; (c) x=0.25; (d) x= 0.40; (e) x=0.41; (f) x=0.42

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Fig. 6. Relationship between x component value and m_Se/m_S in monolayer MoS_2(1-_x₎Se₂_x

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Fig. 7. Raman spectra and statistical analysis of Raman peak positions of monolayer MoS_2(1-_x₎Se₂_x alloy with different components. (a) Raman spectra; (b) statistical analysis of Raman peak positions

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Fig. 8. PL spectra, statistical analysis of peak positions and deviation diagram of band gap of monolayer MoS_2(1-x)Se_2x alloy with different components. (a) PL spectra of monolayer MoS_2(1-_x₎Se₂_x alloy with different components; (b) relationship between wavelength position of PL peak of each component alloy and component value x; (c) deviation diagram between band gap value converted by PL spectrum and band gap value calculated according to band gap relationship

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Fig. 9. Device structure and photoelectric test diagram of monolayer MoS_2(1-_x₎Se₂_x FET. (a) Structural diagram of device; (b) I-V curve of monolayer MoS_2(1-_x₎Se₂_x (x=0.25) device under darkness; (c) photoresponse current curves of monolayer MoS_2(1-_x₎Se₂_x (x= 0.25) device excited by 520, 780, 980 nm laser; (d) enlarged view of photoresponse current curves at arrow mark in Fig. 9(c)

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Mass of MoO₃ /mg	Mass of NaCl /mg	Mass of Se /mg	Mass of S /mg	m_Se/m_S	Temperature /℃
2	4	5	55	1/11	750
2	4	10	50	1/5	750
2	4	15	45	1/3	750
2	4	20	40	1/2	750
2	4	25	35	5/7	750
2	4	30	30	1/1	750

Table 1. Experimental detailed growth parameters

x component value	$E_{2 g}^{1}$ （Mo－Se）/cm^－1	$E_{2 g}^{1}$ （Mo－S）/cm^－1	$A_{g}^{1}$ （Mo－S）/cm^－1	PL peak position /nm	Literature
0.23	271（272）	375（373）	400（399）	709（708）	［18］
0.24	272	375	399	716
0.25	272（270）	374（372）	399（401）	729	［19］
0.40	272	373	399	734
0.41	271（268）	372（374）	399（399）	737（735）	［24］
0.42	270（274）	371（376）	399（400）	739（731）	［28］

Table 2. Comparison of Raman characteristic peaks and PL emission peak positions of monolayer alloy with different components with literature results

FET	Mobility / （cm²·V^-1·s^-1）	Response range /nm	Responsity /（A·W^-1）	Detectivity / （cm·Hz^1/2·W^-1）	Response time /s	Literature
MoS_2（1-_x_）Se₂_x（x=0.15）	0.10					［14］
MoS_2（1-_x_）Se₂_x（x=0.25）	0.10					［15］
MoS_2（1-_x_）Se₂_x（x=0.25）		520-980	0.94	5.32×10¹⁰	0.008	This work
MoS_2（1-_x_）Se₂_x（x=0.30）	0.40					［14］
MoS_2（1-_x_）Se₂_x（x=0.31）	0.02					［15］
MoS_2（1-_x_）Se₂_x（x=0.43）	0.45					［16］
MoS_2（1-_x_）Se₂_x（x=0.65）	3.72					［17］
MoS_2（1-_x_）Se₂_x（x=0.74）	0.06					［18］

Table 3. Comparison between performance test results of FET prepared in this paper and test results in literatures

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