• Infrared and Laser Engineering
  • Vol. 50, Issue 4, 20200455 (2021)
Hongxu Liu, Di Wang, Chen'ang Li, Zhi Wei, Guangyong Jin, Yanpeng Zhang, and di Yu
Author Affiliations
  • Jilin Key Laboratory of Solid-State Laser Technology and Application, Changchun University of Science and Technology, Changchun 130022, China
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    DOI: 10.3788/IRLA20200455 Cite this Article
    Hongxu Liu, Di Wang, Chen'ang Li, Zhi Wei, Guangyong Jin, Yanpeng Zhang, di Yu. Experimental study on damage area and morphology of silica-based QPD induced by long pulse[J]. Infrared and Laser Engineering, 2021, 50(4): 20200455 Copy Citation Text show less
    References

    [1] M Kruer, L Esterowitz, R Allen, et al. Thermal models for laser damage in InSb photovoltaic and photoconductive detectors. Infrared Physics, 16, 375-384(1976).

    [2] D Wang, Z Wei, G Y Jin. Experimental and theoretical investigation of millisecond-pulse laser ablation biased Si avalanche photodiodes. International Journal of Heat and Mass Transfer, 122, 391-394(2018).

    [3] Z Wei, W Zhang, D Wang. Structural, optical and electrical behavior of millisecond pulse laser damaged silicon-based positive-intrinsic-negative photodiode. Optik, 131, 110-115(2017).

    [4] Zhen Zhang, Menglian Zhou, Jianming Zhang. Shadows of laser spots in CCD and their mechanism. Optics and Precision Engineering, 21, 1365-1371(2013).

    [5] Xin Zhao, Shoufeng Tong, Huilin Jiang. Experimental testing on characteristics of four-quadrant detector. Optics and Precision Engineering, 18, 2165-2170(2010).

    [6] Zhiqi Lin, Huijie Li, Yonghui Lang. A study on obtaining the facula parameters of quadrant photodetectors through fretting. Optics and Precision Engineering, 17, 764-770(2009).

    [7] Ming Guo, Yongxiang Zhang, Wenying Zhang, et al. Thermal damage of monocrystalline silicon irradiated by long pulse laser. Infrared and Laser Engineering, 49, 0305002(2020).

    [8] M Zhang, J Nie, K Sun, et al. Numerical analysis on thermal function of single crystal silicon irradiated by combined laser. Infrared and Laser Engineering, 47, 1106011(2018).

    [9] Changbin Zheng, Junfeng Shao, Xuelei Li, et al. Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film. Chinese Optics, 12, 371-381(2019).

    [10] H D Yang, X H Li, G Q Li, et al. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres. Chinese Optics, 4, 86-92(2011).

    [11] M Kruer, R Allen, L Esterowitz, et al. Laser damage in silicon photodiodes. Optical and Quantum Electronics, 8, 453-458(1976).

    [12] V K Arora, A L Dawar. Laser-induced damage studies in silicon and silicon-based photodetectors. Applied Optics, 35, 7061-7065(1996).

    [13] S E Watkins, C Z Zhang, R M Walser, et al. Electrical performance of laser damaged silicon photodiodes. Appl Opt, 29, 827-835(1990).

    [14] J Thorstensen, S E Foss. Investigation of depth of laser damage to silicon as function of wavelength and pulse duration. Energy Procedia, 38, 794-800(2013).

    [15] J Thorstensen, S E Foss. New approach for the ablation of dielectrics from silicon using long wavelength lasers. Energy Procedia, 38, 787-793(2013).

    [16] Sze S M, Kwok K Ng. Physics of Semiconduct Devices[M]. 3rd ed. Translated by Gen Li, Zhang Ruizhi. Xi''an: Xi''an Jiaotong University Press, 2008. (in Chinese)

    [17] C L Marquardt, J F Giuliani, F W Fraser. Observation of impurity migration in laser-damaged junction devices. Radiation Effects, 23, 135-139(1974).

    Hongxu Liu, Di Wang, Chen'ang Li, Zhi Wei, Guangyong Jin, Yanpeng Zhang, di Yu. Experimental study on damage area and morphology of silica-based QPD induced by long pulse[J]. Infrared and Laser Engineering, 2021, 50(4): 20200455
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