Improved structure for SOI diode uncooled infrared focal plane arrays

JIANG Wen-Jing; OU Wen; MING An-Jie; LIU Zhan-Feng; YUAN Feng

doi:10.3724/sp.j.1010.2014.00218

[1] Ishikawa T, Ueno M, Endo K, et al. Low-cost 320×240 uncooled IRFPA using a conventional silicon IC process［J］. Proc. SPIE, 1999, 3689, 556-564.

[2] Kosasayama Y, Sugino T, Ohta Y, et al. Pixel scaling for SOI-diode uncooled infrared focal plane arrays［J］. Proc. SPIE, 2004. 5406, 504-511.

[3] Li C, Han C J, Skidmore G D, et al. DRS uncooled VOx infrared detector development and production status［J］. Proc. SPIE, 2010, Vol. 7660, 76600V.

[4] Miller R G J, Stace B C. The experimental method of infrared spectroscopy［M］. CHINA MACHINE PRESS, 1985, 66-68.

[5] Popova S I, Tolstych T S, Vorobev V T. Optical characteristics of amorphous SiO2 in the region 1400-200cm-1［J］. OPtika SPektrose, 1972, 33, 801-803.

[6] Biao Li. Design and simulation of an uncooleddouble-cantilever microbolometer with the potential for~mK NETD［J］. Sensors and Actuators A, 2004, 112, 351-359.

[7] Kruse P W. Uncooled Thermal Imaging, Arrays Systems and Applications［M］. SPIE Press, 2001, Bellingham, WA.

[8] Selim Eminoglu, Deniz Sabuncuoglu Tezcan, Yusuf Tanrikulu M, et al. Low-cost uncooled infrared detectors in CMOS process［J］. Sensors and Actuators A, 2003, 109, 102-113.