Selective area epitaxy is applied to grow GaN {11-22} semipolar plane template, followed by InGaN/GaN multiple quantum wells （MQWs） growth. The results indicate that the GaN template is composed of the {11-22} side facet and planer c plane, and the MQWs show dual-color emission. Local cathodoluminescence reveals that the 390 nm emission peak originates from the MQWs on semipolar plane, while the 400 nm emission peak results from the MQWs on c plane. The large red-shift in emission wavelength for c plane MQWs compared with that of {11-22} semipolar plane MQWs is due to the indium enrichment originating from additional source supply due to the surface migration effect and lateral vapor-phase diffusion during selective area epitaxy. Another important reason is the reduced polarization effect InGaN/GaN MQWs on semipolar plane. At the same time, the growth rate of the semipolar plane is lower than that of the polar c plane under the same conditions.