Polarization Photodetector Based on van der Waals Materials and Performance Enhancement Strategies （Invited）

Jing WANG; Hanxue JIAO; Yan CHEN; Shuaiqin WU; Xudong WANG; Shukui ZHANG; Junhao CHU; Jianlu WANG

doi:10.3788/gzxb20245307.0753301

Method

Material

Response wavelength/μm

Responsivity

Detectivity/（cm·Hz^1/2·W^-1）

Response time

Noise equivalent power/（nW·Hz^-1/2）

Polarzation ratio

Ref.

Surface Plasmon

Graphene

36.3 mA/W 27 V/W

5×10⁶

100 μs

0.124

N.A.

［8］

392 V/W

N.A.

886/902 ns

0.67

N.A.

［59］

3~20

0.6 A/W

N.A.

7 ps

0.02

［60］

12.2

16 mA/W

N.A.

35 ns

1.3

［61］

6~8

22 mA/W

N.A.

17 ns

0.082

1.5

［62］

410 V/W

1.7×10⁷

176/71 μs

0.04

2.5×10⁴

［55］

Gr/Au

3.6~4.1

15.6 V/W

N.A.

667 ns

0.64

∞/-∞

［67］

1.55

12 mA/W

N.A.

8.7

［63］

PdSe₂

5.3

3.6 V/W

2×10⁵

76 μs

9.7

［65］

Ferroelectric Field

GeSe/MoS₂

0.52~1.55

729.3 mA/W

4.7×10¹²

14 μs

N.A.

6.25

［84］

1.45

1.06 A/W

1.27×10¹¹

361 μs

N.A.

288

［10］

［CH₃（CH₂）₃NH₃］₂（CH₃NH₃）Pb₂Br₇

0.405

N.A.

1.1×10⁹

20 μs

N.A.

2.0

［81］

SbBr₆

0.405

N.A.

1.1×10⁹

45/68 μs

N.A.

6.9

［103］

BA₂CsPb₂Br₇

0.405

39.5 mA/W

1.12×10¹²

300 μs

N.A.

1.5

［104］

PdSe₂/FA_1-_x

Cs_xPbI₃

0.2~1.55

313 mA/W

2.72×10¹³

3.5/4 μs

N.A.

6.04

［105］

Twisted Angle Materials

Twisted Double Bilayer Graphene

7.7

3.7 V/W

N.A.

≈2.0

［100］

2~100

4 A/W

N.A.

6.6×10^-5

N.A.

［106］

SiP₂/MoS₂

1.064

N.A.

0.33

［102］

Jing WANG, Hanxue JIAO, Yan CHEN, Shuaiqin WU, Xudong WANG, Shukui ZHANG, Junhao CHU, Jianlu WANG. Polarization Photodetector Based on van der Waals Materials and Performance Enhancement Strategies （Invited）[J]. Acta Photonica Sinica, 2024, 53(7): 0753301

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