LOW-FREQUENCY NOISE OF Hg1-xCdxTe LONG-WAVE PHOTOVOLTAIC DETECTOR

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[1] Bae S H, lee S J, Kim Y H, et al. Analysis of 1/f noise in LWIR HgCdTe photodiodes [J] J. Electron. Mater., 2000,29(6):877-881.

[2] Virt I S, Obermayr W, Bilyk M, et al. Noise properties of linear defects in Hg1-xCdxTe [J] J. Electron. Mater., 2002,32(8):831-833.

[3] Nemirovsky Y, Unikovsky A. Tunneling and 1/f noise in HgCdTe photodiodes [J]. J.Vac.Sci. Technol.B., 1992,10(40):1602-1610.

[4] Wijewarnasuriya P S, Zandian M, Yong D B, et al. Microscopic defects on MBE grown LWIR Hg1-xCdxTe material and their impact on device performance [J] J. Electron. Mater., 1999,28(6):649-654.

[5] White J K, Antoszewski J, Pal R, et al. Passivation effect on reactive-ion-etch-formed n-on-p junctions in HgCdTe [J]. J. Electron. Mater., 2002,31(7):743-748.

[6] Sang Wenbin, Ju Jianhua, Shi Weiming, et al. Comparison of physical passivation of Hg1-xCdxTe [J]. J. Crystal Growth, 2000,214/215:265-268.

[7] Gopal Vishnu, Gupta Sudha, Bhan R K, et al. Modeling of dark characteristics of mercury cadmium telluride n+-p junctions [J]. Infrared Physics & Technology, 2003,44:143-152.

[8] Rais M H, Musca C A, Antoszewski J, et al. Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion [J]. J. Crystal Growth, 2000,214/215:1106-1110.

[9] Fewster P F. X-ray Scattering from Semiconductors [M]. London:Imperial College Press, 2000:243-276.

[10] Atsushi Shimizu, Jun-ichi Nishizawa, Yutaka Oyama, et al. Dislocation densities in InP single crystals grown under controlled phosphorous vapor pressure by the horizontal Bridgman method [J]. J. Crystal Growth, 2000,209:21-26.

[11] Manabe T, Fjuimoto T, Yamaguchi I, et al. Effects of substrate materials and annealing temperature on crystal structure and epitaxy of La0.7Sr0.3MnO3 films via dipping-pyrolysis process [J]. Thin Solid Films, 1998,323:99-104.